MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21869/-A
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
CBW+
CBW–
CBV+
CBV–
CBU–
CBU+
C1 : Tight tolerance, temp-compensated electrolytic type
(Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C2 : 0.22~2µF R-category ceramic capacitor for noise filtering.
High-side input (PWM)
(5V line) (Note 1,2)
Input signal Input signal Input signal
conditioning conditioning conditioning
Level shifter Level shifter Level shifter
Protection
circuit (UV)
Protection
circuit (UV)
Protection
circuit (UV)
C2
C1
(Note 6)
DIP-IPM
Inrush current
limiter circuit
P
Drive circuit Drive circuit Drive circuit
AC line input
H-side IGBT
S
(Note 4)
U
V
W
M
AC line output
C
Z
Fig. 3
N1
V
NC
N
CIN
L-side IGBT
S
Drive circuit
Z : ZNR (Surge absorber)
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line-to line
surge absorber circuit may become necessary
depending on the application environment).
Input signal conditioning
Fo logic
Protection
circuit
Control supply
Under-Voltage
protection
F
O
CFO
Low-side input (PWM)
(5V line)
(Note 1, 2) Fault output (5V line)
(Note 3, 5)
V
NC
V
D
(15V line)
Note1:
2:
3:
4:
5:
6:
Input logic is high-active. There is a 2.5kΩ (min) pull-down resistor built-in each input circuit. When using an external CR filter, please make it satisfy the
input threshold voltage.
By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 8)
This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 10kΩ resistance.
(see also Fig. 8)
The wiring between the power DC link capacitor and the PN1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to
these PN1 DC power input pins.
Fo output pulse width should be decided by putting external capacitor between CFO and V
NC
terminals. (Example : CFO=22nF
→
t
FO
=1.8ms (Typ.))
High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
DIP-IPM
Drive circuit
P
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
I
C
(A)
SC Protection
Trip Level
H-side IGBT
S
U
V
W
L-side IGBT
S
External protection circuit
N1
Shunt Resistor
(Note 1)
A
N
V
NC
CIN
B
Drive circuit
Collector current
waveform
C R
C
Protection circuit
(Note 2)
0
2
t
w
(µs)
Note1:
In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs.
2:
To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Jul. 2003
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
