MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21869/-A
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Symbol
R
th(j-f)Q
R
th(j-f)F
Parameter
Junction to case thermal
resistance
(Note 3)
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Min.
—
—
Limits
Typ.
—
—
Max.
1.42
2.00
Unit
°C/W
°C/W
Note 3:
Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-emitter saturation
voltage
FWDi forward voltage
Condition
I
C
= 50A, T
j
= 25°C
V
D
= V
DB
= 15V
V
IN
= 5V
I
C
= 50A, T
j
= 125°C
T
j
= 25°C, –I
C
= 50A, V
IN
= 0V
V
CC
= 300V, V
D
= V
DB
= 15V
Switching times
I
C
= 50A, T
j
= 125°C, V
IN
= 0
↔
5V
Inductive load (upper-lower arm)
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
0.70
—
—
—
—
—
—
Limits
Typ.
1.50
1.60
1.70
1.30
0.30
0.40
2.00
0.65
—
—
Max.
2.00
2.10
2.20
1.90
—
0.60
2.60
0.90
1
10
Unit
V
V
µs
µs
µs
µs
µs
mA
Collector-emitter cut-off
current
V
CE
= V
CES
CONTROL (PROTECTION) PART
Symbol
Parameter
V
D
= V
DB
= 15V
V
IN
= 5V
V
D
= V
DB
= 15V
V
IN
= 0V
Condition
Total of V
P1
-V
PC
, V
N1
-V
NC
V
UFB
-V
UFS
, V
VFB
-V
VFS
, V
WFB
-V
WFS
Total of V
P1
-V
PC
, V
N1
-V
NC
V
UFB
-V
UFS
, V
VFB
-V
VFS
, V
WFB
-V
WFS
V
SC
= 0V, F
O
circuit pull-up to 5V with 10kΩ
V
SC
= 1V, I
FO
= 1mA
T
j
= 25°C, V
D
= 15V
(Note 4)
V
IN
= 5V
Trip level
Reset level
T
j
≤
125°C
Trip level
Reset level
C
FO
= 22nF
(Note 5)
Min.
—
—
—
—
4.9
—
0.43
1.0
10.0
10.5
10.3
10.8
1.0
2.1
0.8
Limits
Typ.
—
—
—
—
—
—
0.48
1.5
—
—
—
—
1.8
2.3
1.4
Max.
5.00
0.40
7.00
0.55
—
0.95
0.53
2.0
12.0
12.5
12.5
13.0
—
2.6
2.1
Unit
mA
mA
mA
mA
V
V
V
mA
V
V
V
V
ms
V
V
I
D
Circuit current
V
FOH
Fault output voltage
V
FOL
Short circuit trip level
V
SC(ref)
Input current
I
IN
UV
DBt
Supply circuit under-voltage
UV
DBr
protection
UV
Dt
UV
Dr
Fault output pulse width
t
FO
ON threshold voltage
V
th(on)
Applied between U
P
, V
P
, W
P
-V
PC
, U
N
, V
N
, W
N
-V
NC
OFF threshold voltage
V
th(off)
Note 4 :
Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-
level is less than 85 A.
5 :
Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-
width t
FO
depends on the capacitance value of C
FO
according to the following approximate equation : C
FO
= 12.2
✕
10
-6
✕
t
FO
[F].
Jul. 2003
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
