RoHS
12PT Series RoHS
SEMICONDUCTOR
STANDARD ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC, unless otherwise specified)
12PTxxxx
SYMBOL
Unit
TEST CONDITIONS
T
-
2
Min.
Max.
Max.
0.5
5
IGT
mA
15
VD = 12 V, RL = 33Ω
VGT
V
V
1.3
0.2
VGD
IH
VD = VDRM, RL = 3.3KΩ
IT = 500 mA, gate open
IG = 1.2 IGT
Tj = 125°C
Min.
Max.
mA
mA
30
60
15
30
40
Max.
IL
dV/dt
VTM
VD = 67% VDRM gate open
,
Tj = 125°C
Tj = 25°C
Min.
Max.
Max.
200
V/µs
V
1.6
ITM = 24A, tP = 380 µs
Vto
Rd
0.85
V
Threshold voltage
Dynamic resistance
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
mΩ
µA
mA
30
5
Max.
Max.
IDRM
IRRM
VDRM = VRRM
2
(T
SENSITIVE ELECTRICAL CHARACTERISTICS
j = 25 ºC, unless otherwise specified)
SYMBOL
Unit
TEST CONDITIONS
12PTxxxx-S
IGT
Max.
Max.
Min.
200
0.8
µA
VD = 12 V, RL = 140Ω
VGT
V
V
VGD
VD = VDRM, RL = 3.3KΩ, RGK=220Ω
IRG = 10 µA
Tj = 125°C
0.1
8
VRG
IH
V
Min.
5
IT = 50 mA, RGK = 1 KΩ
IG = 1 mA, RGK = 1 KΩ
Max.
mA
mA
IL
Max.
Min.
Max.
6
Tj = 125°C
Tj = 25°C
dV/dt
VTM
VD = 67% VDRM RGK = 220Ω
,
V/µs
V
5
ITM = 24A, tP = 380 µs
1.6
Tj = 125°C
Tj = 125°C
Max.
Max.
V
Threshold voltage
Dynamic resistance
Vto
Rd
0.85
mΩ
µA
30
5
IDRM
IRRM
Tj = 25°C
Max.
VDRM = VRRM, RGK = 220Ω
mA
Tj = 125°C
2
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
1.3
IPAK/DPAK/TO-220AB/TO-263
TO-220AB insulated
Rth(j-c)
Junction to case (DC)
°C/W
4.6
70
S = 0.5 cm2
S = 1 cm2
D-PAK
Junction to ambient (DC)
D²PAK
45
Rth(j-a)
°C/W
100
I-PAK
TO-220AB, TO-220AB insulated
60
S=Copper surface under tab
www.nellsemi.com
Page 2 of 7
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
