RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
IH[RGK] / IH[RGK=1KΩ]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
5.0
2.4
2.2
Tj=25°C
200µA Series
4.5
4.0
3.5
3.0
5mA & 15mA Series
2.0
1.8
1.6
1.4
1.2
IGT
2.5
2.0
1.5
1.0
0.8
0.6
0.4
0.2
0.0
l
& IL
H
1.0
0.5
0.0
T (°C)
j
R
(KΩ)
GK
-40 -20
0
20
40
60
80 100 120 140
1E-1
1E+0
1E+1
1E-2
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(Typical values)
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for IGT=200µA
dV/dt[RGK] / dV/dt[RGK=220Ω]
dV/dt[CGK] / dV/dt[RGK=220Ω]
10.0
4.0
VD=0.67 X VDRM
Tj=125°C
RGK=220Ω
Tj=125°C
VD=0.67 X VDRM
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.0
R
(KΩ)
CGK(nF)
GK
0.1
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Fig.11 Surge peak on-state current versus
number of cycles
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t versus
sinusoidal pulse width
ISTM(A)
ITSM(A),I²t(A²s)
150
140
130
2000
Tj inital=25°C
ITSM
1000
tp=10ms
One cycle
120
110
100
90
80
70
60
50
40
30
20
Non repetitive
initial=25°C
dI/dt Iimitation
T
j
100
I²t
Repetitive
Tc=105°C
t
(ms)
10
0
Number of cycles
100
p
10
1
10
1000
0.01
0.10
1.00
10.00
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