SEMICONDUCTOR
RoHS
12PT Series
RoHS
Fig.1 Maximum average power dissipation versus
average on-state current
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
α=180°
Fig.2 Average and DC on-state current versus
case temperature
I
T(AV)
(A)
14
12
10
α=180°
TO-251/TO-252
TO-263/TO-220AB
DC
8
6
360°
4
2
TO-220AB
Insulated
I
T(AV)
(A)
1
2
3
4
5
6
7
α
0
8
9
0
25
50
T case (°C)
75
100
125
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
3.0
2.5
DC
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
1.0
I
T
(AV)(A)
Device mounted on FR4 with
Recommended pad layout
2.0
1.5
α=180°
D²PAK
0.5
1.0
0.5
0.0
0
DPAK
0.2
T amb (°C)
25
50
75
100
125
0.1
1E+3
t p (s)
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
Junction to ambient versus pulse duration
(DANK)
K=[Zth(j-a)/Rth(j-a)]
1.00
Device mounted on FR4 with
Recommended pad layout
DPAK
Fig.6 Relative variation of gate trigger and
holding current versus junction
temperature for I
GT
=200
µ
A
2.0
1.8
1.6
1.4
1.2
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25
°
C]
I
GT
D²PAK
0.10
TO-220AB/IPAK
1.0
0.8
0.6
0.4
l
H
& I
L
R
GK
=1K
0.01
1E-2
t p (s)
1E-1
1E+0
1E+1
1E+2
5E+2
0.2
0.0
-40
T j (°C)
-20
0
20
40
60
80
100
120
140
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