PE9704
Advance Information
Table 2. Absolute Maximum Ratings
Symbol
V
DD
V
I
I
I
I
O
T
stg
Electrostatic Discharge (ESD) Precautions
Units
V
V
mA
mA
°C
4.0
Parameter/Conditions
Supply voltage
Voltage on any input
DC into any input
DC into any output
Storage temperature
range
Min
-0.3
-0.3
-10
-10
-65
Max
V
DD
+ 0.3
+10
+10
150
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified in Table 4.
Latch-Up Avoidance
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
Table 3. Operating Ratings
Symbol
V
DD
T
A
Parameter/Conditions
Supply voltage
Operating ambient
temperature range
Min
2.85
-40
Max
3.15
85
Units
V
°C
Table 4. ESD Ratings
Symbol
V
ESD
Parameter/Conditions
ESD voltage (Human Body
Model) – Note 1
Level
1000
Units
V
Note 1:
Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Copyright
Peregrine Semiconductor Corp. 2003
File No. 70/0083~00B
| |
UTSi
CMOS RFIC SOLUTIONS
Page 4 of 12
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