Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
IRFP460
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1
Zth j-mb (K/W)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
T
0.001
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00 1E+01
P
D
tp
D = tp/T
PHW20N50E
0
20
40
60
80
100
Tmb / C
120
140
Pulse width, tp (s)
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID%
Normalised Current Derating
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
120
110
100
90
80
70
60
50
40
30
20
10
0
Drain Current, ID (A)
20
18
16
14
12
10
8
6
4
2
0
Tj = 25 C
PHW20N50E
VGS = 10 V
8V
5V
4.8 V
4.6 V
4.4 V
4.2 V
4V
0
20
40
60
80
Tmb / C
100
120
140
0
1
2
3
4
Drain-Source Voltage, VDS (V)
5
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.5. Typical output characteristics.
I
D
= f(V
DS
); parameter V
GS
Drain-Source On Resistance, RDS(on) (Ohms) PHW20N50E
100
Peak Pulsed Drain Current, IDM (A)
PHW20N50E
tp = 10 us
0.5
0.45
0.4
0.35
0.3
0.25
0.1
10
100
Drain-Source Voltage, VDS (V)
1000
0.2
0
2
4
6
8
10
12
Drain Current, ID (A)
14
16
18
20
4V 4.2V
4.6 V
4.8V
4.4 V
5V
Tj = 25 C
10
RDS(on) = VDS/ ID
1
d.c.
100us
1 ms
10 ms
100 ms
VGS = 6 V
10V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance.
R
DS(ON)
= f(I
D
); parameter V
GS
September 1999
3
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
