Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
MECHANICAL DATA
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
α
IRFP460
SOT429
E
P
A
A1
β
q
S
R
D
Y
L1
(1)
Q
b2
L
1
2
b
b1
e
e
3
w
M
c
0
10
scale
20 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.3
4.7
A1
1.9
1.7
b
1.2
0.9
b1
2.2
1.8
b2
3.2
2.8
c
0.9
0.6
D
21
20
E
16
15
e
5.45
L
16
15
L1
(1)
P
3.7
3.3
Q
2.6
2.4
q
5.3
R
3.5
3.3
S
7.5
7.1
w
0.4
Y
15.7
15.3
α
6°
4°
β
17°
13°
4.0
3.6
Note
1. Tinning of terminals are uncontrolled within zone L1.
OUTLINE
VERSION
SOT429
REFERENCES
IEC
JEDEC
TO-247
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-08-04
Fig.19. SOT429; pin 2 connected to mounting base
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
September 1999
6
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
