MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
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PS12017-A
FLAT-BASE TYPE
INSULATED TYPE
CBU+
CBU–
Application Specific Intelligent
Power Module
Protection
Circuit
P
Input Circuit
Drive Circuit
Brake resistor connection,
Inrush prevention circuit,
etc.
AC 400V line input
R
S
T
Photo
Coupler
B
CBV+
CBV–
INTERNAL FUNCTIONS BLOCK DIAGRAM
CBW+
CBW–
U
V
W
M
Z
C
N
T
S
AC 400V
line output
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit may become necessary
depending on the application environment].
Current sensing
circuit
Input signal conditioning
U
P
V
P
W
P
U
N
V
N
W
N
B
r
Drive Circuit
Fo Logic
Protection
circuit
Control supply
fault sense
GND
VDL VDH
CU CV CW
CL,FO
1
,FO
2
,FO
3
Fault output
Analogue signal output corresponding to
PWM input
(5V line) Note 3)
each phase current (5V line) Note 1) (5V line) Note 2)
Note 1) To prevent chances of signal oscillation, a series resistor (1kΩ) coupling at each output is recommended.
Note 2) By virtue of integrating a photo-coupler inside the module, direct coupling to CPU, without any extemal opto or transformer isolation is possible.
Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kΩ resistance.
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.
For extra precaution, a small film snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC power input pins.
(Fig. 2)
MAXIMUM RATINGS
(Tj = 25°C)
INVERTER PART (Including Brake Part)
Symbol
V
CC
Item
Supply voltage
Condition
Applied between P-N
Ratings
900
1000
1200
1200
±25
(±50)
10 (20)
)” means I
C
peak value
10 (20)
Unit
V
V
V
V
A
A
A
V
CC(surge)
Supply voltage (surge)
Applied between P-N, Surge-value
V
P
or V
N
Each output IGBT collector-emitter static voltage Applied between P-U, V, W, Br or U, V, W, Br-N
V
P(S)
or
Each output IGBT collector-emitter surge voltage Applied between P-U, V, W, Br or U, V, W, Br-N
V
N(S)
±Ic(±Icp)
Ic(Icp)
I
F
(I
FP
)
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
T
C
= 25°C
Note : “(
CONTROL PART
Symbol
V
DH
, V
DB
V
DL
V
CIN
V
FO
I
FO
V
CL
I
CL
I
CO
Supply voltage
Supply voltage
Input signal voltage
Fault output supply voltage
Fault output current
Current-limit warning output voltage
CL output current
Analogue-current-signal output current
Item
Condition
Applied between V
DH
-GND, C
BU+
-C
BU–
,
C
BV+
-C
BV–
, C
BW+
-C
BW–
Applied between V
DL
-GND
Applied between U
P
· V
P
· W
P
· U
N
· V
N
·
W
N
· B
r
-GND
Applied between F
O1
· F
O2
· F
O3
-GND
Sink current of F
O1
· F
O2
· F
O3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
20
7
–0.5 ~ V
DL
+0.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±1
Unit
V
V
V
V
mA
V
mA
mA
Jan. 2000
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
