MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PRE
n.
.
ificatio hange
l spec ct to c
a finaare subje
ot
is is nic limits
e: Th
tr
Notice parame
Som
Y
INAR
LIM
PS12017-A
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
T
j
T
stg
T
C
V
ISO
—
Item
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
Condition
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
Mounting screw: M4.0
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.98 ~ 1.47
Unit
°C
°C
°C
Vrms
N·m
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150°C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
LABEL
Tc
(Fig. 3)
THERMAL RESISTANCE
Symbol
R
th(jc
)
Q
R
th(jc)F
R
th(jc
)
QB
R
th(jc)FB
R
th(c-f)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Item
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Ratings
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
1.6
3.0
2.9
5.5
0.031
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, V
DH
= 15V , V
DB
= 15V, V
DL
= 5V unless otherwise noted)
Symbol
V
CE(sat)
V
EC
V
CE(sat)Br
V
FBr
ton
tc(on)
toff
tc(off)
trr
Item
Collector-emitter saturation
voltage
FWDi forward voltage
Condition
V
DL
= 5V, V
DH
= V
DB
= 15V Input = ON,
Tj = 25°C, Ic = 25A
Tj = 25°C, Ic = –25A, Input = OFF
Min.
—
—
—
—
0.40
—
—
—
—
Ratings
Typ.
—
—
—
—
1.4
0.60
2.2
0.9
0.2
Max.
3.6
3.5
3.6
3.5
2.5
1.5
4.0
1.6
—
Unit
V
V
V
V
µs
µs
µs
µs
µs
Brake IGBT
V
DL
= 5V, V
DH
= 15V Input = ON, Tj = 25°C, Ic = 10A
Collector-emitter saturation voltage
Brake diode forward voltage
Tj = 25°C, I
F
= 10A, Input = OFF
1/2 Bridge inductive, Input = ON
Switching times
V
CC
= 600V, Ic = 25A, Tj = 125°C
V
DL
= 5V, V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit.
FWD reverse recovery time
V
CC
≤
800V, Input = ON (One-Shot)
Short circuit endurance
(Output, Arm, and Load, Short Tj = 125°C start
Circuit Modes)
13.5V
≤
V
DH
= V
DB
=
≤
16.5V, V
DL
= 5V
V
CC
≤
800V, Tj
≤
125°C,
Switching SOA
I
DH
I
DL
V
th(on)
V
th(off)
R
i
V
DH
Circuit Current
V
DL
Circuit Current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
Ic < I
OL
(CL) operation level, Input = ON,
13.5V
≤
V
DH
= V
DB
=
≤
16.5V, V
DL
= 5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
• No destruction
• F
O
output by protection operation
• No destruction
• No protecting operation
• No F
O
output
—
—
—
—
0.8
1.4
3.0
150
2.5
—
150
50
2.0
4.0
—
mA
mA
V
V
kΩ
Jan. 2000
Integrated between input terminal-V
DH
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
