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P3C1024L55TI 参数 Datasheet PDF下载

P3C1024L55TI图片预览
型号: P3C1024L55TI
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗128K ×8 CMOS静态RAM [ULTRA LOW POWER 128K x 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 10 页 / 114 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1024L
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Supply Voltage
3.0V
V
CC
3.6V
3.0V
V
CC
3.6V
MAXIMUM RATINGS
(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
V
CC
V
TERM
T
A
S
TG
I
OUT
I
LAT
Parameter
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND
Operating Ambient Temperature
Storage Temperature
Output Current into Low Outputs
Latch-up Current
>200
Min
-0.3
-0.3
-55
-65
Max
3.9
V
CC
+ 0.3
125
150
20
Unit
V
V
°C
°C
mA
mA
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
(2)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
Parameter
Output High Voltage
(I/O
0
- I/O
7
)
Output Low Voltage
(I/O
0
- I/O
7
)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
V
CC
Current
TTL Standby Current
(TTL Input Levels)
V
CC
Current
CMOS Standby Current
(CMOS Input Levels)
GND
V
IN
V
CC
GND
V
OUT
V
CC
CE
1
V
IH
or CE
2
V
IL
V
CC
= 3.6V, I
OUT
= 0 mA
CE
1
= V
IH
or CE
2
= V
IL
V
CC
= 5.5V, I
OUT
= 0 mA
CE
1
V
CC
-0.2V, CE
2
0.2V
Ind'l.
Com'l.
Ind'l.
Com'l.
Test Conditions
I
OH
= –1mA, V
CC
= 3.3V
I
OL
= 2.1mA
2.2
-0.3
-2
-1
-2
-1
Min
2.4
0.4
V
CC
+ 0.3
0.8
+2
+1
+2
+1
3
Max
Unit
V
V
V
V
µA
µA
mA
I
SB1
10
µA
Document #
SRAM132
REV OR
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