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HYB39S256160FT-7 参数 Datasheet PDF下载

HYB39S256160FT-7图片预览
型号: HYB39S256160FT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位同步DRAM [256-MBit Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 27 页 / 1612 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)  
256-MBit Synchronous DRAM  
1
Overview  
This chapter lists all main features of the product family HYB39S256[400/800/160]F[E/T/F](L) and the ordering information.  
1.1  
Features  
Fully Synchronous to Positive Clock Edge  
0 to 70 °C Standard Operating Temperature  
-40 to 85 °C Industrial Operating Temperature  
Four Banks controlled by BA0 & BA1  
Data Mask for Byte Control (x16)  
Auto Refresh (CBR) and Self Refresh  
Power Down and Clock Suspend Mode  
8192 refresh cycles / 64 ms (7.8 μs)  
Random Column Address every CLK (1-N Rule)  
Single 3.3 V ± 0.3 V Power Supply  
LVTTL Interface versions  
Packages:  
– P(G)–TSOPII–54 (400mil width)  
– PG–TFBGA–54  
Programmable CAS Latency: 2 & 3  
Programmable Wrap Sequence: Sequential or Interleave  
Programmable Burst Length: 1, 2, 4, 8 and full page  
Multiple Burst Read with Single Write Operation  
Automatic and Controlled Precharge Command  
Data Mask for Read / Write control (x4, x8)  
TABLE 1  
Performance  
Poduct Type Speed Code  
–6  
–7  
Unit  
Speed Grade  
PC166–333  
PC133–222  
Max. Clock Frequency  
@CL3  
@CL2  
fCK3  
tCK3  
tAC3  
tCK2  
tAC2  
166  
6
143  
7
MHz  
ns  
5.4  
7.5  
5.4  
5.4  
7.5  
5.4  
ns  
ns  
ns  
Rev. 1.42, 2007-09  
3
03292006-TMTK-JFEU