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HYB39S256160FT-7 参数 Datasheet PDF下载

HYB39S256160FT-7图片预览
型号: HYB39S256160FT-7
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位同步DRAM [256-MBit Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 27 页 / 1612 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)  
256-MBit Synchronous DRAM  
1.2  
Description  
The HYB39S256[400/800/160]F[E/T/F](L) are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4,  
4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates  
for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a  
system clock. The chip is fabricated with Qimonda’s advanced 0.11-μm 256-MBit DRAM process technology.  
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and  
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally  
supplied clock.  
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is  
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and  
speed grade of the device.  
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.  
All 256-Mbit components are available in P(G)–TSOPII–54 and PG–TFBGA–54 packages.  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type  
Standard Operating Temperature  
PC133-222  
Speed Grade  
Description  
Package  
Note  
1)  
HYB39S256407FE-7  
HYB39S256400FF-7  
HYB39S256400FE-7  
HYB39S256400FFL-7  
HYB39S256400FEL-7  
HYB39S256800FF-7  
HYB39S256800FE-7  
HYB39S256800FFL-7  
HYB39S256800FEL-7  
HYB39S256160FF-7  
HYB39S256160FE-7  
HYB39S256160FFL-7  
HYB39S256160FEL-7  
HYB39S256160FF-6  
HYB39S256160FE-6  
HYB39S256160FFL-6  
HYB39S256160FEL-6  
Industrial Operating Temperature  
143MHz 64M x 4 SDRAM  
PG-TFBGA-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
PG-TFBGA-54  
PG-TSOPII-54  
143MHz 32M x 8 SDRAM  
143MHz 16M x 16 SDRAM  
166MHz 16M x 16 SDRAM  
1)  
HYI39S256800FE-7  
HYI39S256160FE-7  
PC166-333  
143MHz 32M x 8 SDRAM  
143MHz 16M x 16 SDRAM  
PG-TSOPII-54  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.42, 2007-09  
4
03292006-TMTK-JFEU