RF3266
Absolute Maximum Ratings
Parameter
Supply Voltages, V
CC
(No RF)
Supply Voltage,VCC (with RF)
P
INMAX
=5dBm, P
OUT
=29dBm,
VSWR=5:1
Supply Voltage, VCCBIAS
Control Voltage, VMODE
Control Voltage, V
REG
RF - Input Power
RF - Output Power
Operating Case Temperature
Storage Temperature
Rating
7.0
4.3
Unit
V
V
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
7.0
3.5
3.5
+6
+30
-30 to +110
-40 to +150
V
V
V
dBm
dBm
°C
°C
Parameter
High Power Mode
(V
MODE
Low)
Operating Frequency Range
Maximum Linear Output
Maximum Linear Output (HSDPA)
Power Gain
Gain Delta versus Frequency
ACLR1 @ ±5MHz
ACLR1 @ ±5MHz, HSDPA
ACLR2 @ ±10MHz
ACLR2 @ ±10MHz, HSDPA
EVM
Linear Efficiency
I
CC
(I
CC
, I
CC
_Bias)
Input VSWR
Harmonic Output (2fo)
Harmonic Output (3fo)
Min.
Specification
Typ.
Max.
Unit
Condition
T
C
=+25°C, V
CC
=3.4V, V
MODE
=0V,
V
REG
=2.85V, Mod.=W-CDMA ULRMC 12.2,
P
OUT
=+28dBm, unless otherwise specified.
1920
28
26.5
25
0
28
0.5
-40
-40
-52
-52
1
36
2.5
40
463
2.1:1
1980
MHz
dBm
dBm
HSDPA Modulation. See Condition A,
Table 1.
32
1
-36
-36
-48
-48
4
515
-10
-25
dB
dB
dBc
dBc
dBc
dBc
%
%
mA
dBm
dBm
f=2fo, RBW=1MHz
f=3fo, RBW=1MHz
P
OUT
=+26.5dBm. See Condition A, Table 1.
P
OUT
=+26.5dBm. See Condition A, Table 1.
2 of 10
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Rev A0 DS070529
RFMD [ RF MICRO DEVICES ]
