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K4J55323QG-BC20 参数 Datasheet PDF下载

K4J55323QG-BC20图片预览
型号: K4J55323QG-BC20
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K4J55323QG
7.0 FUNCTIONAL DESCRIPTION
7.1 Simplified State Diagram
Power
Applied
256M GDDR3 SDRAM
Power
On
Precharge
PREALL
Self
Refresh
REFS
REFSX
MRS
EMRS
MRS
Idle
REFA
Auto
Refresh
CKEH
CKEL
Active
Power
Down
CKEH
CKEL
ACT
Precharge
Power
Down
Row
Active
Write
Write A
Write
Write
Read A
Read
Read
Read
Write A
Read
A
PRE
Read A
Write
A
PRE
PRE
Read
A
PRE
Precharge
PREALL
Automatic Sequence
Command Sequence
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
7 of 53
Rev. 1.1 November 2005