欢迎访问ic37.com |
会员登录 免费注册
发布采购

K4S641632F-TC75 参数 Datasheet PDF下载

K4S641632F-TC75图片预览
型号: K4S641632F-TC75
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的SDRAM 1M X 16Bit的×4银行同步DRAM LVTTL [64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 11 页 / 135 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
 浏览型号K4S641632F-TC75的Datasheet PDF文件第1页浏览型号K4S641632F-TC75的Datasheet PDF文件第2页浏览型号K4S641632F-TC75的Datasheet PDF文件第3页浏览型号K4S641632F-TC75的Datasheet PDF文件第5页浏览型号K4S641632F-TC75的Datasheet PDF文件第6页浏览型号K4S641632F-TC75的Datasheet PDF文件第7页浏览型号K4S641632F-TC75的Datasheet PDF文件第8页浏览型号K4S641632F-TC75的Datasheet PDF文件第9页  
K4S641632F
PIN CONFIGURATION
(Top view)
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
SS
CMOS SDRAM
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
11
, Column address : CA
0
~ CA
7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
CKE
Clock enable
A
0
~ A
11
BA
0
~ BA
1
RAS
CAS
WE
L(U)DQM
DQ
0
~
15
V
DD
/V
SS
V
DDQ
/V
SSQ
N.C/RFU
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
No connection
/reserved for future use
Rev.0.1 Sept. 2001