K4S641632F
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70°C)
Parameter
Symbol
Test Condition
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CMOS SDRAM
Version
- 50 - 55 -60 - 70 - 75 -1H -1L
Unit Note
Operating current
(One bank active)
Precharge standby current
in power-down mode
I
CC1
I
CC2
P
160 150 140 115 110 100 100 mA
1
1
15
mA
6
3
3
30
mA
25
mA
1
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
N
Precharge standby current
in non power-down mode
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
NS
Input signals are stable
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC3
N
mA
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC3
NS
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
C
L
Operating current
(Burst mode)
Refresh current
Self refresh current
I
CC4
180 170 160 140 135 110 110 mA
1
I
CC5
I
CC6
180 170 160 140 135 125 125 mA
1
400
mA
uA
2
3
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632F-TC**
4. K4S641632F-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Rev.0.1 Sept. 2001
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
