K4S641632F
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Version
- 50 - 55 -60 - 70 - 75 -1H -1L
Parameter
Symbol
Test Condition
Unit Note
Burst length = 1
tRC ³ tRC(min)
IO = 0 mA
Operating current
(One bank active)
ICC1
160 150 140 115 110 100 100 mA
1
ICC2P CKE £ VIL(max), tCC = 10ns
1
1
mA
Precharge standby current
in power-down mode
ICC2PS CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
ICC2N
15
6
Input signals are changed one time during 20ns
Precharge standby current
in non power-down mode
mA
mA
mA
CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥
ICC2NS
Input signals are stable
ICC3P CKE £ VIL(max), tCC = 10ns
3
3
Active standby current in
power-down mode
ICC3PS CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns
ICC3N
30
25
Active standby current in
non power-down mode
(One bank active)
Input signals are changed one time during 20ns
CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥
Input signals are stable
ICC3NS
IO = 0 mA
Operating current
(Burst mode)
Page burst
4Banks Activated
tCCD = 2CLKs
ICC4
180 170 160 140 135 110 110 mA
180 170 160 140 135 125 125 mA
1
Refresh current
ICC5
ICC6
tRC ³ tRC(min)
CKE £ 0.2V
2
3
4
C
L
1
mA
uA
Self refresh current
400
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632F-TC**
4. K4S641632F-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev.0.1 Sept. 2001
SAMSUNG [ SAMSUNG ]
