RF AMP & SERVO SIGNAL PROCESSOR
S1L9223B01
ABSOLUTE MAXIMUM RATINGS
Characteristic
Supply Voltage
Power Dissipation
Operating Temperature
Storage temperature
Symbol
V
MAX
P
D
T
OPR
T
STG
Value
6
200
−20
to + 70
−55
to + 150
Unit
V
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, V
DD
= D
VDD
= V
CC
= +5V, V
SS
= D
VSS
= GND = V
SSP
= 0V)
Characteristic
Supply Current High
Supply Current Typ
Supply Current Low
RF Amp Offset Voltage
RF Amp Voltage Gain
RF THD
Symbol
ICCHI
ICCTY
ICCLO
Vrfo
Grf
Grfmd
Test Conditions
V
CC
= 6V, No load
V
CC
= 5V, No Load
V
CC
= 3.4V, No Load
Input open
SG3 f = 10kHz,
40mVp-p, sine
SG3 f =1kHz, 40mVp-p,sine
SG3 DC 2.7V
SG3 DC 2.3V
input open
WDCH=88.2kHz Pulse,
$841
SG3 f=10kHz, 32mVp-p,
sine
SG3 f = 10kHz, 32mVp-p,
sine
∆Gfe1-∆Gfe1
SG3 DC 2.7V
SG3 DC2.3V
Output
−
−
−
pin 74
pin 74
pin 74
pin 74
pin 74
pin 59
pin 59
pin 59
pin 59
pin 59
pin 59
pin 59
Min.
20
12
10
−80
25.1
−
3.8
−
−450
−35
27
27
−3
4.4
−
Typ.
40
30
25
0
28.1
−
−
−
−250
0
30
30
0
−
−
Max.
60
48
40
+80
31.1
5
−
1.2
−50
35
33
33
+3
−
0.6
Unit
mA
mA
mA
mV
dB
%
V
V
mV
mV
dB
dB
dB
V
V
RF Amp Max. Output Voltage Vrfpp1
RF Amp Min. Output Voltage Vrfpp2
Focus Error Amp Offset
Voltage
Focus Error Amp Auto Offset
Voltage
Focus Error Amp PD1
Voltage Gain
Focus Error Amp PD2
Voltage Gain
Focus Error Amp Voltage
Difference
Focus Error Amp Max.
Output Voltage
Focus Error Amp Min. Output
Voltage
Vfeo1
Vfeo2
Gfe1
Gfe2
Gfe∆
Gfepp1
Gfepp2
7
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
