S1L9223B01
RF AMP & SERVO SIGNAL PROCESSOR
ELECTRICAL CHARACTERISTICS (Continued)
(Ta=25°C, V
DD
= D
VDD
= V
CC
= +5V, V
SS
= D
VSS
= GND = V
SSP
= 0V)
Characteristic
AGC Max Gain
AGC EQ Gain
AGC Gain2
AGC Compress Ratio
AGC Frequency
Symbol
Gagc
Geq
Gagc2
Cagc
Fagc
Test Conditions
SG4 f = 500kHz, 20mVp-p,
sine
Gain Difference of Gagc at
f =1.5MHz
SG4 f = 500kHz, 0.5Vp-p,
sine
Gain Difference of Gagc2 at
0.1Vp-p
Gain Difference
SG4 f=1.5MHz,0.1Vp-p,sine
and f=500kHz,0.1Vp-p,sine
$800, $820, input open
$800, $820
SG3 0.3Vp-p, 10kHz, sine
SG3 0.3Vp-p, 40kHz, sine
Gtef-Gtee
DG3 DC 4.5V
SG3 DC 0.5V
$830 SG3 0.3Vp-p, 10kHz,
sine
$830 SG3 0.3Vp-p, 10kHz,
sine
SG3 0.3Vp-p, 10kHz, sine,
$820
SG3 0.3Vp-p, 10kHz, sine,
$821
SG3 0.3Vp-p,10kHz, sine,
$822
SG3 0.3Vp-p, 10kHz, sine,
$824
SG3 0.3Vp-p, 10kHz, sine,
$824
Output
pin 76
pin 76
pin 76
pin 76
pin 76
Min.
16
0
3.5
0
−1.5
Typ.
19
1
6
2.5
0
Max.
22
2
9
5
2.5
Unit
dB
dB
dB
dB
dB
Tracking Error Offset Voltage Vteo
Tracking Error Amp Voltage
Gain F
Tracking Error Amp Voltage
Gain E
Tracking Error Amp
Voltage Gain Difference
Tracking Error Amp
Maximum Output Voltage H
Tracking Error Amp
Minimum Output Voltage L
Tracking Error Amp Gain up
F
Tracking Error Amp Gain up
E
Tracking Gain Normal
Tracking F Gain 1
Tracking F Gain 2
Tracking F Gain 3
Tracking F Gain 4
Gtef
Gtee
Gte∆
Vtepp1
Vtepp2
Tguf
Tgue
Fgfn
Fgf1
Fgf2
Fgf3
Fgf4
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
pin 54
−50
2.1
−0.75
−0.25
3.5
−
8.0
5.3
2.1
0.1
−1.7
−5.0
−9.2
0
5.1
2.25
2.75
−
−
11.0
8.3
5.1
3.1
1.3
−2.0
−6.2
+50
8.1
5.25
5.75
−
1.5
14.0
11.3
8.1
6.1
4.3
1.0
−3.2
mV
dB
dB
dB
V
V
dB
dB
dB
dB
dB
dB
dB
8
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
