AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode
characteristics, making this device ideal for motor and inductive load control applications.
Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications)
Features
V
DS
(V) = Clamped
I
D
= 80A (V
GS
= 10V)
R
DS(ON)
< 5.3 mΩ (V
GS
= 10V)
D
D
G
10Ω
S
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
G
Current
T
C
=25°
C
T
C
=100°
C
I
D
I
DG
I
GS
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
H
Maximum
clamped
clamped
80
57
+50
+50
250
50
125
115
58
-55 to 175
Units
V
V
A
mA
A
A
mJ
W
°
C
V
GS
Continuous Drain Gate Current
Continuouse Gate Source Current
Pulsed Drain Current
C
Avalanche Current L=100uH
H
Repetitive avalanche energy
T
C
=25°
C
Power Dissipation
B
T
C
=100°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
60
0.7
Max
75
1.3
Units
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
