AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
120
100
80
60
40
20
0
L ID
tA =
BV −VDD
VGS=10V, ID=30A
TC=25°C
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
10
100
Time in avalanche, tA (us)
Figure 12: Single Pulse Avalanche capability
1000
T
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
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