AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200
150
100
50
100
80
60
40
20
0
5V
6V
VDS=5V
10V
4.5V
7V
4V
V
=3.5V
VGS=10V, IDG=S 30A
25°C
125°C
-40°C
3.5
0
0
1
2
3
4
5
1
1.5
2
2.5
3
4
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
5
2
VGS=10V
1.8
1.6
1.4
1.2
1
VGS=10V
ID=30A
4.5
4
20
48
30
10
26
63
40
13
3.5
3
0.8
0.6
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125 150 175 200
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
14
12
10
8
100
10
1
ID=30A
125°C
0.1
25°C
125°C
0.01
0.001
6
-40°C
4
25°C
0.0001
-1. -1. -1. -1. -0. -0. -0. -0. 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2
6
4
2
0
8
6
4
2
2
5
8
11
14
17
20
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/7
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