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S29GL064N90BFI030 参数 Datasheet PDF下载

S29GL064N90BFI030图片预览
型号: S29GL064N90BFI030
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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Data
She et
10.9
Command Definitions
Table 10.1
Command Definitions (x16 Mode, BYTE# = V
IH
)
Command
Sequence
Cycles
Bus Cycles (Notes
2–5)
First
RA
XXX
555
555
555
555
555
555
555
555
555
SA
555
555
XXX
XXX
555
555
XXX
XXX
55
RD
F0
AA
AA
AA
AA
AA
AA
AA
AA
AA
29
AA
AA
A0
90
AA
AA
B0
30
98
2AA
2AA
PA
XXX
2AA
2AA
55
55
PD
00
55
55
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
555
555
F0
20
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
2AA
55
55
55
55
55
55
55
55
55
555
555
555
555
555
555
555
555
SA
90
90
90
90
90
88
90
A0
25
XXX
PA
SA
00
PD
WC
PA
PD
WBL
PD
X00
X01
X01
X03
(SA)X02
0001
227E
00/01
X0E
X0F
Second
Third
Fourth
Fifth
Sixth
Read
Reset
Autoselect
Manufacturer ID
Device ID
Device ID
Secured Silicon Sector Factory Protect
Sector Protect Verify
1
1
4
6
4
4
4
3
4
4
3
1
3
3
2
2
6
6
1
1
1
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
Write to Buffer
Program Buffer to Flash
Write to Buffer Abort Reset
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Sector Erase
Program/Erase Suspend
Program/Erase Resume
CFI Query
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Total number of cycles in command sequence is determined by number of
words written to write buffer. Maximum number of cycles in command
sequence is 21, including
Program Buffer to Flash
command.
12. Command sequence resets device for next command after aborted write-
to-buffer operation.
13. Unlock Bypass command is required prior to Unlock Bypass Program
command.
14. Unlock Bypass Reset command is required to return to read mode when
device is in unlock bypass mode.
15. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
16. Erase Resume command is valid only during Erase Suspend mode.
17. Command is valid when device is ready to read array data or when device
is in autoselect mode.
18. Refer to
for individual Device IDs per device density
and model number.
Notes
1. See
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
2AA as shown in table, address bits above A11 and data bits above DQ7
are don’t care.
5. No unlock or command cycles required when device is in read mode.
6. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
7. Fourth cycle of the autoselect command sequence is a read cycle. Data
bits DQ15–DQ8 are don’t care. Except for RD, PD and WC. See
for more information.
8. For S29GL064N and S29GL032N, Device ID must be read in three cycles.
9. Refer to
for data indicating Secured Silicon Sector
factory protect status.
10. Data is 00h for an unprotected sector and 01h for a protected sector.
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
®
Flash Family
51