8 Megabit Multi-Purpose Flash
SST39VF800Q / SST39VF800
Advance Information
T
ABLE
6: S
YSTEM
I
NTERFACE
I
NFORMATION
Address
Data
Data
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0027H
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
V
DD
Min. (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: millivolts
V
DD
Max. (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word Program 2
N
µs (2
4
= 16 µs)
Typical time out for min. size buffer program 2
N
µs (00H = not supported)
Typical time out for individual Sector/Block Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip Erase 2
N
ms (2
6
= 64 ms)
Maximum time out for Word Program 2
N
times typical (2
1
x 2
4
= 32 µs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block Erase 2
N
times typical
(2
1
x 2
4
= 32 ms)
Maximum time out for Chip Erase 2
N
times typical (2
1
x 2
6
= 128 ms)
343 PGM T6.2
1
2
3
4
5
6
7
T
ABLE
7: D
EVICE
G
EOMETRY
I
NFORMATION
Address
Data
Data
27H
0014H
Device size = 2
N
Bytes (14H = 20; 2
20
= 1M Bytes)
28H
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
29H
0000H
2AH
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
2BH
0000H
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
0002H
00FFH
0000H
0010H
0000H
000FH
0000H
0000H
0001H
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 255 + 1 = 256 sectors (00FFH = 255)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 15 + 1 = 16 blocks (000FH = 15)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
343 PGM T7.2
8
9
10
11
12
13
14
15
16
© 1999 Silicon Storage Technology, Inc.
7
343-04 2/99
SST [ SILICON STORAGE TECHNOLOGY, INC ]
