tm
TE
CH
READ CYCLE
t
T221160A
RC
RAS
t
t
RP
V
IH
RAS V
IL
t
t
t
CRP
t
CSH
RSH
t
t
CRP
t
RCD
RRH
V
IH
CAS V
IL
t
t
CAS
t
AR
t
t
RAD
RAH
ASC
RAL
ASR
t
t
CAH
V
IH
ADDR V
IL
WE
V
IH
V
IL
ROW
t
COLUMN
RCS
t
ROW
RCH
t
t
t
AA
NOTE1
RAC
CAC
CLZ
VAILD DATA
t
OFF1
t
V
IOH
I/O
V
IOL
V
IH
V
IL
OPEN
OPEN
t
OAC
t
OFF2
OE
EARLY WRITE CYCLE
t
RC
t
RAS
t
RP
V
IH
RAS V
IL
t
CRP
t
RCD
t
CSH
t
RSH
t
CAS
t
CRP
RAS
V
IH
V
IL
t
t
t
AR
RAD
RAH
t
t
RAL
CSH
ASR
t
ASC
t
V
IH
ADDR V
IL
ROW
COLUMN
t
CWL
t
RWL
t
t
WCS
ROW
WCR
t
WCH
t
WP
t
DHR
V
IH
WE V
IL
t
DS
t
DH
V
IOH
V
IOL
V
IH
OE
V
IL
I/O
VAILD DATA
DON'T CARE
UNDEFINED
Note:
t
OFF1
is referenced from the rising edge of
RAS
or
CAS
, whichever occurs last.
Taiwan Memory Technology, Inc. reserves the right
P. 8
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
