tm
TE
CH
T221160A
DC CHARACTERISTICS
(Ta = 0 to 70°C, Vcc = 5V
±10%,
Vss = 0V)
Parameter
Operating Current
Standby Current
Icc2
Standby Current
Fast Page Mode Current
RAS -only refresh
Current
CAS Before RAS
Refresh Current
-
4
-
4
-
4
-
4
Symbol
-25
-30
-35
-40
Unit
Test Condition
RAS , CAS cycling
tRC=min
TTL interface,
Min Max Min Max Min Max Min Max
Icc1
-
170
-
150
-
130
-
120 mA
mA RAS , CAS =VIH,
DOUT=High-Z
CMOS interface,
RAS , CAS > Vcc-0.2V
Icc3
Icc4
Icc5
Icc6
-
-
-
-
2
-
-
-
-
2
-
-
-
-
2
-
-
-
-
2
mA
170
170
170
150
150
150
130
130
130
RAS =VIL, CAS
mA
120
cycling, tPC= min
CAS =VIH, RAS
120 mA cycling, t = min
RC
120 mA
RAS , CAS cycling,
tRC= min
Note:
Icc depends on output load condition when the device is selected.
Icc max is specified at the output open condition, Icc is specified as an average current.
CAPACITANCE
(Ta =25°C, Vcc =5V, f = 1M HZ)
Parameter
Input Capacitance
(address)
Input Capacitance
( RAS , CAS , WE , OE )
Output Capacitance
(data-in/out)
Symbol
CI1
CI2
CI/O
Typ
-
-
-
Max
5
7
10
Unit
pF
pF
pF
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
