tm
TE
CH
T221160A
AC CHARACTERISTICS
(note 1,2,3) (Ta = 0 to 70°C)
AC TEST CONDITIONS:
Vcc=5V
±10%,
input pulse level = 0 to 3V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
Access Time From CAS Precharge
RAS Pulse Width
RAS Pulse Width
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
CAS Hold Time
CAS Precharge Time
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS )
Column Address to RAS Lead Time
Read Command Setup Time
SYM
tRC
tRWC
tPC
tPCM
tRAC
tCAC
tOAC
tAA
tACP
tRAS
-25
43
65
15
37
25
7
7
12
14
-30
55
85
20
42
30
8
8
16
18
-35
65
95
23
49
35
9
9
18
20
-40
75
105
25
52
40
10
10
20
22
UNIT
Notes
MIN MAX MIN MAX MIN MAX MIN MAX
ns
ns
ns
ns
ns
4
ns
5
ns
13
ns
8
ns
25 10K 30 10K 35 10K 40 10K ns
tRASC 25
100K
30
100K
35
100K
40
100K
ns
ns
tRSH
7
8
9
10
ns
tRP
15
20
23
25
tCAS
tCSH
tCP
tRCD
tCRP
tASR
tRAH
tRAD
tASC
tCAH
tAR
4
21
3
10
3
0
5
8
0
4
22
12
0
0
0
3
3
15
17
10K
6
26
3
10
3
0
5
8
0
4
26
14
0
0
0
3
3
15
21
10K
10K 10 10K ns
ns
30
35
ns
4
5
8
10
3
0
5
8
0
4
30
16
0
0
0
3
3
15
25
10
5
0
5
8
0
5
34
18
0
0
0
3
3
15
29
ns
7
ns
ns
ns
ns
8
ns
ns
ns
ns
ns
14
ns
9,14
ns
9
ns
ns
10,16
13
14
16
18
tRAL
tRCS
Read Command Hold Time Reference to CAS tRCH
Read Command Hold Time Reference to RAS tRRH
tCLZ
CAS to Output in Low-Z
Output Buffer Turn-off Delay From CAS or
RAS
tOFF1
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
