tm
TE
CH
-25
tOFF2
tWCS
tWCH
tWCR
tWP
tRWL
tCWL
tDS
tDH
tDHR
tRWD
tAWD
tCWD
tT
tREF
tRPC
tCSR
tCHR
tOEH
tORD
10
5
7
4
0
-
0
4
22
4
5
5
0
4
22
34
21
17
1.5
50
4
10
10
10
4
0
6
-
0
4
26
4
6
6
0
4
26
46
29
24
1.5
50
4
10
10
10
4
0
-30
8
-
0
4
30
4
7
7
0
4
30
51
31
25
2.5
50
4
-35
8
-
0
6
T221160A
-40
8
16
11,14
AC CHARACTERISTICS
(continued)
AC CHARACTERISTICS
PARAMETER
Output Buffer Turn-off OE to
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time (Reference
to RAS )
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time (Reference to RAS )
RAS to WE Delay Time
Column Address to WE Delay Time
CAS to WE Delay Time
Transition Time (rise or fall)
Refresh Period (256 cycles)
RAS to CAS Precharge Time
CAS Setup Time (CBR REFRESH)
CAS Hold Time (CBR REFRESH)
OE Hold Time From WE During Read-
Modify-Write Cycle
OE Setup Prior to RAS During Hidden
Refresh Cycle
SYM
MIN MAX MIN MAX MIN MAX MIN MAX UNIT Notes
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
50
4
10
10
10
5
0
ns
ms
ns
ns
ns
ns
ns
6
6
15
11
11
11
2,3
14
34
6
9
8
0
5
34
56
35
27
2.5
14
14
14
12
12
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
