2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
_C
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200
_C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150
_C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200
_C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150
_C
Power Dissipation :
(2N Prefix)
a
. . . . . . . . . . (T
C
= 25_C) 1800 mW
(PN/SST Prefixes)
b
. . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391
4392
4393
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain
Current
b
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
G
= –1
mA,
V
DS
= 0 V
V
DS
= 20 V
V
DS
= 15 V
2N/PN: I
D
= 1 nA
SST: I
D
= 10 nA
2N
PN
SST
V
GS
= –20 V
V
DS
= 0 V
2N/SST
PN
2N: T
A
= 150_C
PN: T
A
= 100_C
SST: T
A
= 125_C
–55
–40
–4
50
50
50
–10
150
150
–40
–2
25
25
25
–100
–1000
–200
–200
–100
–1000
–200
–200
–5
75
100
–40
V
–0.5
5
5
5
–100
–1000
–200
–200
nA
pA
–3
30
60
mA
I
DSS
V
DS
= 20 V, V
GS
= 0 V
–5
–5
–13
–1
–3
–5
5
5
5
0.005
0.005
0.005
5
13
13
13
1
1
1
3
0.25
0.3
0.35
Gate Reverse Current
I
GSS
Gate Operating Current
I
G
V
DG
= 15 V, I
D
= 10 mA
2N: V
GS
= –5 V
2N: V
GS
= –7 V
V
DS
= 20 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST V
DS
= 10 V, V
GS
= –10 V
100
100
100
1
1
1
100
100
100
200
200
200
200
200
200
nA
pA
nA
pA
Drain Cutoff Current
I
D(off)
V
DS
= 20 V
T
A
= 150_C
2N: V
GS
= –5 V
2N: V
GS
= –7 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
V
DS
= 20 V
T
A
= 100_C
V
DS
= 10 V
T
A
= 125_C
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST: V
GS
= –10 V
I
D
= 3 mA
0.4
0.4
0.4
30
60
1
100
1
V
W
V
Drain-Source
On-Voltage
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 6 mA
I
D
= 12 mA
r
DS(on)
V
GS(F)
V
GS
= 0 V, I
D
= 1 mA
I
G
= 1 mA
V
DS
= 0 V
2N
PN/SST
0.7
0.7
1
www.vishay.com
7-2
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
VISHAY [ VISHAY TELEFUNKEN ]
