2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
r
DS(on)
– Drain-Source On-Resistance (
Ω )
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 20 V, V
GS
= 0 V
80
I
DSS
120
160
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
DSS
– Saturation Drain Current (mA)
100
On-Resistance vs. Drain Current
T
A
= 25_C
80
V
GS(off)
= –2 V
60
60
r
DS
40
80
40
–4 V
–8 V
20
40
20
0
0
–2
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–10
0
0
1
10
I
D
– Drain Current (mA)
100
On-Resistance vs. Temperature
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 1 mA
r
DS
changes X 0.7%/_C
160
4
t
r
120
V
GS(off)
= –2 V
80
–4 V
40
–8 V
Switching Time (ns)
3
5
Turn-On Switching
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50 W
V
GS(L
)
= –10 V
t
d(on)
@
I
D
= 12 mA
2
t
d(on)
@
I
D
= 3 mA
1
0
–55 –35
0
–15
5
65
25 45
T
A
– Temperature (_C)
85
105
125
0
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–2
–10
30
Turn-Off Switching
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
= –10 V
30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V
DS
= 0 V
24
Switching Time (ns)
Capacitance (pF)
24
18
V
GS(off)
= –2 V
t
f
t
d(off)
18
12
12
C
iss
6
C
rss
0
6
V
GS(off)
= –8 V
0
0
2
4
6
I
D
– Drain Current (mA)
8
10
0
–4
–8
–12
–16
V
GS
– Gate-Source Voltage (V)
–20
www.vishay.com
7-4
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
VISHAY [ VISHAY TELEFUNKEN ]
