2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
b
og
10
(mS)
g
og
Transconductance vs. Drain Current
100
V
GS(off)
= –2 V
g
fs
– Forward Transconductance (mS)
V
DS
= 10 V
f = 1 kHz
T
A
= –55_C
25_C
10
1
125_C
0.1
100
200
500
1000
1
0.1
1.0
I
D
– Drain Current (mA)
10
f – Frequency (MHz)
Output Characteristics
100
V
GS(off)
= –4 V
80
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
80
100
Transfer Characteristics
V
GS(off)
= –4 V
V
DS
= 20 V
T
A
= –55_C
60
25_C
40
60
V
GS
= 0 V
–0.5 V
40
–1.0 V
–1.5 V
20
–2.0 V
–2.5 V
20
125_C
0
0
2
4
6
8
10
0
0
–1
–2
–3
–4
–5
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
V
DD
R
L
SWITCHING TIME TEST CIRCUIT
4391
V
GS(L)
R
L
*
I
D(on)
*Non-inductive
–12 V
800
W
12 mA
4392
–7 V
1600
W
6 mA
4393
–5 V
3000
W
3 mA
1 kΩ
51
Ω
V
GS(L)
V
GS(H)
OUT
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
V
IN
Scope
51
Ω
See Typical Characteristics curves for changes.
www.vishay.com
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
7-6
VISHAY [ VISHAY TELEFUNKEN ]
