2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
V
DS
= 10 V
g
fs
– Forward Transconductance (mS)
40
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
400
gos – Output Conductance (µS)
500
Noise Voltage vs. Frequency
100
en – Noise Voltage nV /
Hz
30
g
fs
g
os
200
10
I
D
= 1 mA
20
200
I
D
= 10 mA
10
100
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
0
0
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–2
–10
0
Gate Leakage Current
10 nA
I
GSS
@ 125_C
T
A
= 125_C
I
D
= 10 mA
100
Common-Gate Input Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
1 nA
I
G
– Gate Leakage)
g
ig
100 pA
1 mA
(mS)
1 mA
10
b
ig
10 pA
T
A
= 25_C
1 pA
10 mA
I
GSS
@ 25_C
1
I
G(on)
@ I
D
0.1 pA
0
6
12
18
24
V
DG
– Drain-Gate Voltage (V)
30
0.1
100
200
500
f – Frequency (MHz)
1000
Common-Gate Forward Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–g
fg
10
(mS)
(mS)
g
fg
b
fg
1.0
10
Common-Gate Reverse Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–b
rg
–g
rg
+g
rg
1
0.1
0.1
100
200
500
f – Frequency (MHz)
1000
0.01
100
200
500
f – Frequency (MHz)
1000
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-5
VISHAY [ VISHAY TELEFUNKEN ]
