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VG36641641DT 参数 Datasheet PDF下载

VG36641641DT图片预览
型号: VG36641641DT
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1363 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VIS
Basic Features and Function Description
1. Simplified State Diagram
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
Self
Refresh
try
en
it
ex
LF
SE
Mode
Register
Set
MRS
IDLE
LF
SE
REF
AUTO
Refresh
CK
E
E
CK
ROW
ACTIVE
BS
T
ACT
Power
Down
CKE
CKE
T
BS
Active
Power
Down
ad
Re
W
rit
e
Au Write
to p
red with
har
ge
h
wit rge
ad cha
Re Pre
to
Au
re
co
ve
r
y
Write (Write recovery)
Read
PRE
W
rit
e
WRITE
SUSPEND
CKE
CKE
WRITE
Read (write recovery)
Write
READ
CKE
CKE
READ
SUSPEND
Write with
Auto Precharge
R
Auto ead w
Pre ith
cha
rge
rge
cha
P re
E(
PR
with
ge
rite
echar
W
Pr
uto
(wri
A
t
e re
cov
ery)
ter
min
atio
n
)
Read with
Auto Precharge
WRITE A
SUSPEND
CKE
CKE
WRITE A
CKE
READ A
CKE
READA
SUSPEND
POWER
ON
Precharge
Precharge
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state
Document :1G5-0177
Rev.2
PR
E
(P r
ech
arg
e
m
ter
tio
ina
n)
Page 9