30BQ040TRPBF全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号30BQ040TRPBF的概述

1. 概述 30BQ040TRPBF是一款由Texas Instruments（德州仪器）制造的高性能低压降线性稳压器（LDO）。该芯片设计用于支持需要稳定的低电压供应的各种电子设备，尤其是在便携式设备和系统中。随着电子产品向更小、更高效的方向发展，LDO的适用性愈发广泛，特别是在功耗管理和调整电源的需求日益增加的情况下。 2. 详细参数 30BQ040TRPBF的核心特性包括但不限于： - 输入电压范围：1.8V至6V - 输出电压范围：0.8V至5V，具有可调性和固定选项 - 输出电流能力：最大为400mA - 低压降（Dropout Voltage）：在400mA时，典型值为130mV - 静态电流：典型值为10µA@ 5V - 温度范围：工作温度范围为-40°C至+125°C - 封装类型：SOT-23包，适合表面安装 - 噪声抑制：良好的电源噪声抑制能力 - 过流与过热保护：...

产品型号30BQ040TRPBF的Datasheet PDF文件预览

Bulletin PD-2.439 rev. G 07/04

30BQ040

SCHOTTKY RECTIFIER

3 Amp

I_F(AV)= 3.0Amp

V_R= 40V

Major Ratings and Characteristics

Description/ Features

The 30BQ040 surface-mount Schottky rectifier has been de-

signed for applications requiring low forward drop and small

foot prints on PC boards. Typical applications are in disk drives,

switching power supplies, converters, free-wheeling diodes,

battery charging, and reverse battery protection.

Characteristics

30BQ040 Units

Rectangular

waveform

3.0

F(AV)

Small foot print, surface mountable

Very low forward voltage drop

High frequency operation

RRM

@t =5µs sine

2000

0.43

FSM

Guard ring for enhanced ruggedness and long term

@3.0Apk,T =125°C

reliability

range

- 55 to150

°C

Case Styles

30BQ040

SMC

www.irf.com

30BQ040

Bulletin PD-2.439 rev. G 07/04

Voltage Ratings

Part number

30BQ040

V_R

Max. DC Reverse Voltage (V)

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

30BQ Units Conditions

I_F(AV)Max. Average Forward Current

3.0

50%duty cycle@T_L=118°C, rectangular waveform

4.0

50%duty cycle@T_L=110°C, rectangular waveform

I_FSMMax. Peak One Cycle Non-Repetitive

Surge Current

2000

5µs Sineor3µsRect. pulse

Following any rated

load condition and

110

6.0

1.0

10ms Sine or 6ms Rect. pulse with rated V_RRMapplied

E_ASNon Repetitive Avalanche Energy

mJ T_J=25°C,I_AS=1.0A,L=12mH

I_AR

Repetitive Avalanche Current

Current decayinglinearlytozeroin1µsec

Frequencylimited byT_Jmax. Va=1.5xVr typical

Electrical Specifications

Parameters

30BQ Units Conditions

T_J= 25 °C

V_FMMax. Forward Voltage Drop

(1)

0.53

0.68

0.43

0.57

@ 3A

@ 6A

@ 3A

@ 6A

T_J= 125 °C

V_R= rated V_R

I_RMMax. Reverse Leakage Current (1)

0.5

mA T_J= 25 °C

mA T_J= 125 °C

C_T

L_S

Max. Junction Capacitance

Typical Series Inductance

230

3.0

V_R= 5V_DC(test signal range 100KHz to 1Mhz) 25°C

nH Measured lead to lead 5mm from package body

V/µs (Rated V_R)

dv/dt Max. Voltage Rate of Change

(1) Pulse Width < 300µs, Duty Cycle < 2%

10000

Thermal-Mechanical Specifications

Parameters

30BQ Units

Conditions

T_J

Max. Junction Temperature Range (*) - 55 to 150 °C

T_stgMax. Storage Temperature Range -55 to150 °C

R_thJLMax. Thermal Resistance

Junction to Lead

R_thJAMax. Thermal Resistance

Junction to Ambient

°C/W DC operation

(**)

Approximate Weight

Case Style

Device Marking

0.24(0.008) g (oz.)

SMC

IR3F

Similar to DO-214AB

(*) dPtot

dTj

thermal runaway condition for a diode on its own heatsink

Rth(j-a)

(**) Mounted 1 inch square PCB

www.irf.com

30BQ040

Bulletin PD-2.439 rev. G 07/04

100000

10000

1000

100

= 150˚C

125˚C

100˚C

75˚C

50˚C

25˚C

= 150˚C

= 125˚C

Reverse Voltage - V_R(V)

Fig. 2-Typical Values Of Reverse Current

Vs. Reverse Voltage (PerLeg)

25˚C

1000

100

= 25˚C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

10 15 20 25 30 35 40 45

Forward Voltage Drop-V_FM(V)

Reverse Voltage - V_R(V)

Fig. 1-Max. Forward Voltage Drop

Characteristics (Per Leg)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage (PerLeg)

100

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Notes:

Single Pulse

1. Duty factor D = t1/ t 2

(Thermal Resistance)

2. Peak Tj = Pdm x ZthJC+Tc

0.1

0.00001

0.0001

0.001

t₁, Rectangular Pulse Duration (Seconds)

Fig. 4-Max. Thermal Impedance Z _thJCCharacteristics (PerLeg)

0.01

0.1

100

www.irf.com

30BQ040

Bulletin PD-2.439 rev. G 07/04

1.5

160

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

D=0.20

D=0.25

D=0.33

D=0.50

D=0.75

150

140

130

120

110

100

RMS Limit

0.5

Square wave (D = 0.50)

80% Rated Vr applied

see note (2)

0.5

1.5

2.5

3.5

4.5

Average Forward Current-I _F(AV)(A)

Average Forward Current- I _F(AV)(A)

Fig. 5 - Maximum Average Forward Dissipation

Vs. Average Forward Current

Fig. 4-Maximum Average Forward Current

Vs. Allowable Lead Temperature

10000

1000

100

At Any Rated Load Condition

And With Rated Vrrm Applied

Following Surge

100

1000

10000

SquareWavePulseDuration-T_p(Microsec)

Fig. 6-Maximum Peak Surge Forward Current Vs. Pulse Duration

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=80%ratedV_R

www.irf.com

30BQ040

Bulletin PD-2.439 rev. G 07/04

Outline Table

Device Marking: IR3F

2.75 (.108)

3.15 (.124)

5.59 (.220)

6.22 (.245)

CATHODE

ANODE

6.60 (.260)

7.11 (.280)

.152 (.006)

.305 (.012)

POLARITY

PART NUMBER

2.00 (.079)

2.62 (.103)

.102 (.004)

.203 (.008)

0.76 (.030)

1.52 (.060)

7.75 (.305)

8.13 (.320)

Outline SMC

Dimensions in millimeters and (inches)

For recommended footprint and soldering techniques refer to application note #AN-994

Marking & Identification

Each device has 2 rows for identification. The first row designates the device as manufactured by International

Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and

Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.

IR3F

VOLTAGE

CURRENT

IR LOGO

YYWWX

SITE ID

WEEK

2nd digit of the YEAR

"Y" = 1st digit of the YEAR "standard product"

"P" = "Lead-Free"

www.irf.com

30BQ040

Bulletin PD-2.439 rev. G 07/04

Tape & Reel Information

Dimensions in millimetres and (inches)

Ordering Information Table

Device Code

040 TR

Current Rating

= Single Lead Diode

= Schottky Q Series

Voltage Rating (040 = 40V)

y none= Box (1000 pieces)

y TR = Tape & Reel (3000 pieces)

y none= Standard Production

y PbF = Lead-Free

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 07/04

www.irf.com

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30BQ040TRPBF产品参数

型号:	30BQ040TRPBF
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	INTERNATIONAL RECTIFIER CORP
零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2
针数：	2
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.17
Is Samacsys：	N
其他特性：	FREEWHEELING DIODE, HIGH RELIABILITY
应用：	GENERAL PURPOSE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.68 V
JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	2000 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	150 °C
最大输出电流：	4 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大重复峰值反向电压：	40 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	MATTE TIN
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

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产品型号30BQ040TRPBF的概述

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