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产品型号30BQ100TR的概述

芯片30BQ100TR的概述 30BQ100TR是一款典型的功率管理芯片，主要用于电源转换和电源管理应用。此芯片具有高度的集成度，可以显著减少外部组件的数量，从而降低设计的复杂性和成本。30BQ100TR通常用于智能手机、平板电脑、笔记本电脑等消费类电子产品中，广泛适用于各种电源供应需求。该芯片的主要特性包括高效能、低静态电流以及广泛的输入电压范围，这使得其能够在多种应用场景中适应。此外，30BQ100TR还内置了多种保护功能，包括过流保护、过压保护和过热保护，这些功能进一步增强了其在电源管理中的可靠性。芯片30BQ100TR的详细参数 30BQ100TR的技术参数通常包括以下几个重要方面： 1. 输入电压范围：3V至30V，适合应对各种电源输入情况。 2. 输出电压可调范围：2.5V至15V，用户可根据需求灵活调整。 3. 最大输出电流：可达到2A，对于大多数消费类电子产品来说，...

产品型号30BQ100TR的Datasheet PDF文件预览

Bulletin PD-20409 rev. C 01/07

30BQ100PbF

SCHOTTKY RECTIFIER

3 Amp

I_F(AV)= 3.0Amp

V_R= 100V

Major Ratings and Characteristics

Description/ Features

The 30BQ100PbF surface-mount Schottky rectifier has been

designed for applications requiring low forward drop and small

foot prints on PC boards. Typical applications are in disk drives,

switching power supplies, converters, free-wheeling diodes,

battery charging, and reverse battery protection.

Characteristics

Values Units

Rectangular

waveform

3.0

F(AV)

100

Small foot print, surface mountable

Very low forward voltage drop

High frequency operation

RRM

@t =5μs sine

800

0.62

FSM

Guard ring for enhanced ruggedness and long term

reliability

@3.0Apk, T =125°C

Lead-Free ("PbF" suffix)

range

- 55 to175

°C

Case Styles

SMC

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

Voltage Ratings

Part number

30BQ100PbF

V_R

Max. DC Reverse Voltage (V)

100

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

30BQ Units Conditions

I_F(AV)Max. Average Forward Current

3.0

4.0

50%duty cycle@T_L=148°C, rectangular waveform

50%duty cycle@T_L=138°C, rectangular waveform

I_FSMMax. Peak One Cycle Non-Repetitive

Surge Current

800

5μs Sineor3μsRect. pulse

Following any rated

load condition and

3.0

0.5

10ms Sine or 6ms Rect. pulse with rated V_RRMapplied

E_ASNon Repetitive Avalanche Energy

mJ T_J=25°C,I_AS=1.0A,L=6mH

I_AR

Repetitive Avalanche Current

Current decayinglinearlytozeroin1 μsec

Frequencylimited byT_Jmax. Va=1.5xVr typical

Electrical Specifications

Parameters

30BQ Units Conditions

T_J= 25 °C

V_FMMax. Forward Voltage Drop

(1)

0.79

0.90

0.62

0.70

@ 3A

@ 6A

@ 3A

@ 6A

T_J= 125 °C

V_R= rated V_R

I_RMMax. Reverse Leakage Current (1)

0.5

5.0

mA T_J= 25 °C

mA T_J= 125 °C

C_T

L_S

Max. Junction Capacitance

Typical Series Inductance

115

3.0

V_R= 5V_DC(test signal range 100KHz to 1Mhz) 25°C

nH Measured lead to lead 5mm from package body

dv/dt Max. Voltage Rate of Change

10000

V/μs (Rated V_R)

(1) Pulse Width < 300μs, Duty Cycle < 2%

Thermal-Mechanical Specifications

Parameters

30BQ Units

Conditions

T_J

Max. Junction Temperature Range(*) - 55 to 175 °C

T_stgMax. Storage Temperature Range -55 to175 °C

R_thJLMax. Thermal Resistance

Junction to Lead

°C/W DC operation

(**)

R_thJAMax. Thermal Resistance

Junction to Ambient

Approximate Weight

Case Style

0.24(0.008) g (oz.)

SMC

IR3J

Similar to DO-214AB

Device Marking

(*) dPtot

dTj

thermal runaway condition for a diode on its own heatsink

Rth(j-a)

(**) Mounted 1 inch square PCB

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

= 175˚C

150˚C

125˚C

0.1

100˚C

75˚C

50˚C

0.01

0.001

0.0001

25˚C

100

Reverse Voltage - V_R(V)

= 175˚C

= 125˚C

Fig. 2-Typical Values Of Reverse Current

Vs. Reverse Voltage (PerLeg)

1000

100

25˚C

= 25˚C

0.1

0.2

0.4

0.6

0.8

1.2

Forward Voltage Drop-V_FM(V)

Reverse Voltage - V_R(V)

Fig. 1-Max. Forward Voltage Drop

Characteristics (Per Leg)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage (PerLeg)

100

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Notes:

Single Pulse

(Thermal Resistance)

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

0.1

0.00001

0.0001

0.001

t₁, Rectangular Pulse Duration (Seconds)

Fig. 4-Max. Thermal Impedance Z _thJCCharacteristics (PerLeg)

0.01

0.1

100

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

2.5

180

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

160

1.5

RMS Limit

140

Square wave (D = 0.50)

80% Rated Vr applied

120

0.5

see note (2)

100

0.5

1 1.5 2 2.5 3 3.5 4 4.5

Average Forward Current-I _F(AV)(A)

Average Forward Current- I _F(AV)(A)

Fig. 5 - Maximum Average Forward Dissipation

Vs. Average Forward Current

Fig. 4-Maximum Average Forward Current

Vs. Allowable Lead Temperature

1000

100

At Any Rated Load Condition

And With Rated Vrrm Applied

Following Surge

100

1000

10000

SquareWavePulseDuration-T_p(Microsec)

Fig. 6-Maximum Peak Surge Forward Current Vs. Pulse Duration

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=80%ratedV_R

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

Outline Table

Device Marking: IR3J

2.75 (.108)

3.15 (.124)

5.59 (.220)

6.22 (.245)

CATHODE

ANODE

6.60 (.260)

7.11 (.280)

.152 (.006)

.305 (.012)

POLARITY

PART NUMBER

2.00 (.079)

2.62 (.103)

.102 (.004)

.203 (.008)

0.76 (.030)

1.52 (.060)

7.75 (.305)

8.13 (.320)

Outline SMC

Dimensions in millimeters and (inches)

For recommended footprint and soldering techniques refer to application note #AN-994

Marking & Identification

Each device has 2 rows for identification. The first row designates the device as manufactured by International

Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and

Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.

IR3J

VOLTAGE

CURRENT

IR LOGO

PYWWX

SITE ID

WEEK

2nd digit of the YEAR

"Y" = 1st digit of the YEAR "standard product"

"P" = "Lead-Free"

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

Tape & Reel Information

Dimensions in millimetres and (inches)

30BQ100

********************************************

* SPICE Model Diode

********************************************

.SUBCKT 30BQ100 ANO CAT

D1 ANO 1 CAT

*Define diode model

.MODEL DMOD D (IS=100N, N=1.34718, BV=120, RS=40.3878M, CJO=158.574P, VJ=3.61795,

M=526.488M, EG=1.11, XTI=2, RL=25.6436MEG).

******************************************************************************

.ENDS 30BQ100

Thermal Model Subcircuit

.SUBCKT 30BQ100 5 1

CTHERM1

CTHERM2

CTHERM3

CTHERM4

6.42E-01

1.03E+01

1.66E+02

6.78E+03

RTHERM1

RTHERM2

RTHERM1

3.34E+00

4.97E+00

2.84E+00

7.75E-01

.ENDS 30BQ100

www.irf.com

30BQ100PbF

Bulletin PD-20409 rev. C 01/07

Ordering Information Table

Device Code

100 TR PbF

Current Rating

= Single Lead Diode

= Schottky Q Series

Voltage Rating (100 = 100V)

y none= Box (1000 pieces)

y TR = Tape & Reel (3000 pieces)

y none= Standard Production

y PbF = Lead-Free

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 01/07

www.irf.com

30BQ100TR相关文章

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30BQ100TR产品参数

型号:	30BQ100TR
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	VISHAY INTERTECHNOLOGY INC
零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2
针数：	2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.17
Is Samacsys：	N
其他特性：	HIGH RELIABILITY, FREE WHEELING DIODE
应用：	GENERAL PURPOSE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.62 V
JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-C2
最大非重复峰值正向电流：	800 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-55 °C
最大输出电流：	4 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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产品型号30BQ100TR的概述

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