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  • 4N36XG图
  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • 4N36XG
  • 数量50000 
  • 厂家Isocom 
  • 封装原厂原装 
  • 批号16+ 
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  • 4N36XG图
  • 深圳市一线半导体有限公司

     该会员已使用本站15年以上
  • 4N36XG
  • 数量16000 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
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产品型号4N36XG的Datasheet PDF文件预览

4N35X, 4N36X, 4N37X,  
4N35, 4N36, 4N37,  
OPTICALLY COUPLED  
ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
APPROVALS  
Dimensions in mm  
2.54  
z
ULrecognised,FileNo.E91231  
Package System " GG "  
1
6
5
7.0  
6.0  
'X'SPECIFICATIONAPPROVALS  
2
3
z
VDE0884in3availableleadforms:-  
4
-STD  
-Gform  
1.2  
3.0  
-SMDapprovedtoCECC00802  
7.62  
6.62  
7.62  
0.26  
4.0  
3.0  
z
13°  
Max  
DESCRIPTION  
0.5  
The 4N35, 4N36, 4N37 series of optically  
coupled isolators consist of infrared light  
emitting diode and NPN silicon photo transistor  
in a standard 6 pin dual in line plastic package.  
3.35  
0.5  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
FEATURES  
z
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Current Transfer Ratio (100% min.)  
High Isolation Voltage (5.3kV ,7.5kVPK  
All electrical parameters 100R%MStested  
Custom electrical selections available  
Storage Temperature  
OperatingTemperature  
Lead SolderingTemperature  
-55°Cto+150°C  
-55°Cto+100°C  
z
z
z
z
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
)
INPUTDIODE  
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
60mA  
6V  
105mW  
APPLICATIONS  
z
z
z
z
DC motor controllers  
Industrial systems controllers  
Measuring instruments  
OUTPUTTRANSISTOR  
Signal transmission between systems of  
different potentials and impedances  
Collector-emitterVoltageBVCEO  
Collector-baseVoltageBV  
Emitter-collectorVoltageBCVBOECO  
CollectorCurrent  
30V  
70V  
6V  
50mA  
160mW  
OPTION G  
OPTION SM  
7.62  
SURFACE MOUNT  
Power Dissipation  
POWERDISSIPATION  
0.6  
1.25  
0.75  
Total Power Dissipation  
(deratelinearly2.67mW/°Cabove25°C)  
200mW  
0.26  
0.1  
10.46  
9.86  
10.16  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
ParkView Industrial Estate, Brenda Road  
Hartlepool,Cleveland,TS25  
17/7/08  
DB90046  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.2  
1.5  
10  
V
IF = 10mA  
ReverseCurrent(IR)  
μA  
V
VR =6V  
Output  
Collector-emitter Breakdown (BV  
)
30  
IC = 1mA  
( NoteCE2O )  
Collector-base Breakdown (BVCBO  
Emitter-collectorBreakdown(BVECO  
Collector-emitterDarkCurrent(ICEO  
)
)
)
70  
6
V
V
nA  
IC = 100μA  
IE = 10μA  
VCE =10V  
50  
Coupled Current Transfer Ratio (CTR)  
Collector-emitter Saturation VoltageVCE(SAT)  
100  
%
V
10mA IF , 10V VCE  
10mA IF , 0.5mA IC  
0.3  
Input to Output Isolation Voltage VISO 5300  
7500  
Input-output Isolation Resistance RISO 5x1010  
VRMS  
V
See note 1  
See note 1  
VIO = 500V (note 1)  
ΩPK  
Output Rise Time tr  
2
2
μs  
μs  
VCC =5V,IF=10mA  
RL = 75Ω ( FIG 1)  
OutputFallTime  
tf  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
VCC  
Input  
ton  
toff  
RL = 75Ω  
tf  
tr  
Output  
Output  
10%  
10%  
90%  
90%  
FIG 1  
DB90046m-AAS/A5  
17/7/08  
Collector Power Dissipation vs. Ambient Temperature  
Collector Current vs. Collector-emitter Voltage  
200  
TA = 25°C  
50  
50  
150  
100  
40  
30  
30  
20  
15  
20  
10  
50  
0
10  
IF = 5mA  
0
-30  
0
25  
50  
75  
100 125  
0
2
4
6
8
10  
Ambient temperature TA ( °C )  
Collector-emitter voltage VCE ( V )  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Forward Current vs. Ambient Temperature  
0.14  
0.12  
80  
70  
I = 10mA  
ICF = 0.5mA  
60  
0.10  
0.08  
50  
40  
0.06  
0.04  
30  
20  
0.02  
0
10  
-30  
0
25  
50  
75  
100 125  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Forward Current  
1.4  
1.2  
1.5  
1.0  
IF = 10mA  
VCE = 10V  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.5  
0
V
= 10V  
TACE= 25°C  
-30  
0
25  
50  
75  
100  
1
2
5
10  
20  
50  
Ambient temperature TA ( °C )  
Forward current IF (mA)  
DB90046m-AAS/A5  
17/7/08  
配单直通车
4N36XG产品参数
型号:4N36XG
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:PLASTIC, DIP-6
Reach Compliance Code:compliant
HTS代码:8541.40.80.00
风险等级:5.79
其他特性:VDE APPROVED, UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE
当前传输比率-最小值:100%
标称电流传输比:100%
最大暗电源:50 nA
最大正向电流:0.06 A
最大正向电压:1.5 V
最大绝缘电压:5300 V
安装特点:THROUGH HOLE MOUNT
元件数量:1
最高工作温度:100 °C
最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.16 W
最长响应时间:0.00001 s
子类别:Optocoupler - Transistor Outputs
表面贴装:NO
Base Number Matches:1
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