6MBI75UA-120全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

SPECIFICATION

IGBT Module

Device Name :

6MBI75UA-120

MS5F 5354

Type Name

Spec. No.

:

Fuji Electric Co.,Ltd.

Matsumoto Factory

Jan. 31 ’03

Y.Kobayashi

a

T.Fujihira

1

T.Miyasaka

K.Yamada

Jan. 31 ’03

Jan.- 31- ’03

MS5F 5354

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R e v i s e d R e c o r d s

Classi-

Applied

date

Date

fication

Ind.

Content

Drawn

Checked

Approved

T.Fujihira

T.Miyasaka

K.Yamada

Issued

date

enactment

Jan.- 31 - ’03

Revised VF and Cies (P4/13)

Revised Reliability test

method and conditions(P6.7.8/13)

Revised VF curve(P11/13)

T.Miyasaka

K.Yamada

Revision

Apr.-16-’03

a

T.Fujihira

Y.Kobayashi

a

2

MS5F 5354

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6MBI75UA-120

1. Outline Drawing ( Unit : mm )

a

(

) shows reference dimension.

2. Equivalent circuit

15,16

25,26

17

18

1

2

5

6

9

10

U

23,24

V

21,22

W

19,20

3

4

7

8

11

12

27,28

13,14

a

3

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3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）

Maximum

Ratings

Items

Symbols

Conditions

Units

Collector-Emitter voltage

VCES

VGES

1200

±20

100

75

200

V

Gate-Emitter voltage

Collector current

Tc=25℃

Ic

Continuous

1ms

Tc=80℃

Tc=25℃

Tc=80℃

Icp

A

150

-Ic

-Ic pluse

Pc

Tj

Tstg

75

150

390

150

Collector Power Dissipation

Junction temperature

Storage temperature

1 device

W

℃

-40～ +125

between terminal and copper base *1

between thermistor and others *2

Isolation

voltage

Viso

-

AC : 1min.

2500

3.5

VAC

Screw

Torque

Mounting *3

N・m

(*1) All terminals should be connected together when isolation test will be done.

(*2) Two thermistor terminals should be connected together, each other terminals should be connected together

and shorted to base plate when isolation test will be done.

(*3) Recommendable Value : 2.5~3.5 Nm (M5)

4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)

Characteristics

Items

Symbols

ICES

Conditions

VGE = 0V

VCE = 1200V

VCE = 0V

VGE=±20V

VCE = 20V

Ic = 75mA

Units

min.

typ.

max.

Zero gate voltage

Collector current

-

1.0

mA

nA

V

Gate-Emitter

leakage current

IGES

-

200

8.5

Gate-Emitter

threshold voltage

VGE(th)

4.5

6.5

Tj= 25℃

Tj=125℃

Tj= 25℃

Tj=125℃

-

2.05

2.30

1.75

2.00

2.40

-

2.1

-

VCE(sat)

VGE=15V

Ic = 75A

(terminal)

Collector-Emitter

saturation voltage

V

VCE(sat)

(chip)

Cies

ton

tr

tr (i)

toff

tf

^a8

Input capacitance

Turn-on time

VCE=10V,VGE=0V,f=1MHz

Vcc = 600V

-

nF

0.25

0.12

0.03

0.36

0.07

1.20

0.60

-

1.00

0.30

3.10

-

2.80

-

0.35

-

Ic = 75A

VGE=±15V

Rg = 9.1 Ω

μs

Turn-off time

Tj= 25℃

VGE=0V

VF

(terminal)

^a2.10

^a2.30

^a1.80

^a2.00

-

Tj=125℃

Forward on voltage

V

Tj= 25℃

Tj=125℃

VF

(chip)

IF = 75A

Reverse recovery time

Lead resistance, terminal-chip *

IF = 75A

μs

mΩ

ｔｒｒ

R lead

4.1

T = 25℃

T =100℃

T = 25/50℃

-

5000

495

3375

-

Resistance

R

Ω

465

3305

520

3450

B value

B

K

a

(*)Biggest internal terminal resistance among arm.

a

4

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5. Thermal resistance characteristics

Characteristics

Items

Symbols

Conditions

Units

min.

typ.

max.

0.32

0.73

-

IGBT

FWD

-

Thermal resistance(1device)

Contact Thermal resistance

Rth(j-c)

Rth(c-f)

℃/W

with Thermal Compound (※)

0.05

※ This is the value which is defined mounting on the additional cooling fin with thermal compound.

6. Indication on module

6MBI75UA-120

75A 1200V

Lot.No.

Place of manufacturing (code)

7.Applicable category

This specification is applied to IGBT Module named 6MBI75UA-120 .

8.Storage and transportation notes

℃ and humidity of 45 to 75% .

・ The module should be stored at a standard temperature of 5 to 35

・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

・ Avoid exposure to corrosive gases and dust.

・ Avoid excessive external force on the module.

・ Store modules with unprocessed terminals.

・ Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

90%

0V

V

GE

t

rr

L

I

rr

V

Ic

CE

90%

Vcc

10%

V

Ic

CE

0V

0A

RG

VGE

V

CE

t

r(i)

t

f

t

r

Ic

t

off

t

on

10. Packing and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

a

5

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11. Reliability test results

a

Reliability Test Items

Reference

Test

Number Accept-

of ance

sample number

norms

cate-

Test items

1 Terminal Strength Pull force

Test methods and conditions

EIAJ ED-4701

gories

(Aug.-2001 edition)

Test Method 401

MethodⅠ

Test Method 402

methodⅡ

: 20N

5

( 1 : 0 )

(Pull test)

Test time

: 10±1 sec.

: 2.5 ~ 3.5 N･m (M5)

: 10±1 sec.

2 Mounting StrengthScrew torque

Test time

5

( 1 : 0 )

Test Method 403

Reference 1

Condition code B

3 Vibration

Range of frequency : 10 ~ 500Hz

5

( 1 : 0 )

Sweeping time

Acceleration

: 15 min.

100m/s²

:

Sweeping direction : Each X,Y,Z axis

Test time

: 6 hr. (2hr./direction)

5000m/s²

Test Method 404

Condition code B

4 Shock

Maximum acceleratio :

Pulse width

Direction

5

( 1 : 0 )

: 1.0msec.

: Each X,Y,Z axis

: 3 times/direction

: 235±5 ℃

Test time

5 Solderabitlity

Solder temp.

Immersion time

Test time

Test Method 303

Condition code A

: 5±0.5sec.

: 1 time

Each terminal should be Immersed in solder

within 1~1.5mm from the body.

6 Resistance to

Soldering Heat

Solder temp.

Immersion time

Test time

: 260±5 ℃

: 10±1sec.

: 1 time

Test Method 302

Condition code A

5

( 1 : 0 )

Each terminal should be Immersed in solder

within 1~1.5mm from the body.

Test Method 201

Test Method 202

1 High Temperature Storage temp.

Storage Test duration

2 Low Temperature Storage temp.

Storage

3 Temperature

Humidity

Storage

4 Unsaturated

: 125±5 ℃

: 1000hr.

: -40±5 ℃

: 1000hr.

: 85±2 ℃

: 85±5%

5

( 1 : 0 )

Test duration

Storage temp.

Relative humidity

Test duration

Test temp.

Test Method 103

Test code C

: 1000hr.

: 120±2 ℃

Test Method 103

Test code E

5

( 1 : 0 )

1.7 × 10⁵Pa

: 85±5%

: 96hr.

Pressure Cooker Atmospheric pressure:

Test humidity

Test duration

Test Method 105

5 Temperature

Cycle

Test temp.

:

Low temp. -40±5 ℃

High temp. 125 ±5 ℃

RT 5 ~ 35 ℃

Dwell time

: High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

: 100 cycles

Number of cycles

Test temp.

Test Method 307

method Ⅰ

6 Thermal Shock

5

( 1 : 0 )

+0

℃

:

High temp. 100 ^-5

Low temp. 0 ^-⁺⁰⁵

Condition code A

℃

Used liquid : Water with ice and boiling water

Dipping time

Transfer time

Number of cycles

: 5 min. par each temp.

: 10 sec.

: 10 cycles

a

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a

Reliability Test Items

Reference

norms

Test

cate-

gories

Number Accept-

of ance

sample number

Test items

Test methods and conditions

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 101

1 High temperature

Reverse Bias

5

( 1 : 0 )

Test temp.

: Ta = 125±5 ℃

(Tj ≦ 150 ℃)

Bias Voltage

Bias Method

: VC = 0.8×VCES

: Applied DC voltage to C-E

VGE = 0V

Test duration

Test temp.

: 1000hr.

Test Method 101

2 High temperature

Bias (for gate)

5

( 1 : 0 )

: Ta = 125±5 ℃

(Tj ≦ 150 ℃)

Bias Voltage

Bias Method

: VC = VGE = +20V or -20V

: Applied DC voltage to G-E

VCE = 0V

Test duration

Test temp.

Relative humidity

Bias Voltage

Bias Method

: 1000hr.

Test Method 102

Condition code C

3 Temperature

Humidity Bias

5

( 1 : 0 )

85±2 ^oC

:

: 85±5%

: VC = 0.8×VCES

: Applied DC voltage to C-E

VGE = 0V

Test duration

ON time

: 1000hr.

Test Method 106

4 Intermitted

Operating Life

(Power cycle)

( for IGBT )

: 2 sec.

( 1 : 0 )

OFF time

: 18 sec.

Test temp.

:

∆ Tj=100±5 deg

Tj

≦ 150 ℃, Ta=25±5 ℃

Number of cycles

: 15000 cycles

Failure Criteria

Item

Characteristic

Symbol

Failure criteria

Lower limit Upper limit

Unit

Note

Electrical

characteristic

Leakage current

ICES

±IGES

-

USL×2

mA

µA

Gate threshold voltage VGE(th) LSL×0.8

USL×1.2 mA

Saturation voltage

Forward voltage

VCE(sat)

VF

∆ VGE

or ∆ VCE

∆ VF

-

USL×1.2

V

Thermal

IGBT

USL×1.2 mV

resistance

FWD

-

USL×1.2 mV

Isolation voltage

Visual inspection

Peeling

Viso

Broken insulation

-

Visual

inspection

-

The visual sample

Plating

and the others

LSL : Lower specified limit.

USL : Upper specified limit.

Note :

Each parameter measurement read-outs shall be made after stabilizing the components

at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.

And in case of the wetting tests, for example, moisture resistance tests, each component

shall be made wipe or dry completely before the measurement.

a

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a

Reliability Test Results

Test

cate-

gorie

s

Number

of

failure

sample

Reference

Number

of test

sample

norms

Test items

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 401

MethodⅠ

Test Method 402

methodⅡ

Test Method 403

Condition code B

Test Method 404

Condition code B

Test Method 303

Condition code A

Test Method 302

Condition code A

Test Method 201

1 Terminal Strength

(Pull test)

2 Mounting Strength

5

0

3 Vibration

4 Shock

5 Solderabitlity

6 Resistance to Soldering Heat

1 High Temperature Storage

2 Low Temperature Storage

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

3 Temperature Humidity

Storage

4 Unsaturated

Pressure Cooker

5 Temperature Cycle

Test Method 105

Test Method 307

method Ⅰ

6 Thermal Shock

Condition code A

Test Method 101

1 High temperature Reverse Bias

5

0

Test Method 101

2 High temperature Bias

( for gate )

3 Temperature Humidity Bias

Test Method 102

Condition code C

Test Method 106

4 Intermitted Operating Life

(Power cycling)

( for IGBT )

a

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Collector current vs. Collector-Emitter voltage

Tj= 25℃ / chip

Tj= 125℃ / chip

200

150

100

50

200

150

100

50

15V

VGE=20V 15V

VGE=20V

12V

10V

8V

10V

8V

0

0.0

1.0

2.0

3.0

4.0

5.0

0.0

1.0

2.0

3.0

4.0

5.0

Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.) / chip

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj=25ﾟC / chip

200

150

100

50

10.0

8.0

Tj=25℃ Tj=125℃

6.0

4.0

Ic=150A

Ic=75A

Ic= 37.5A

2.0

0.0

0

0.0

1.0

2.0

3.0

4.0

5.0

10.0

15.0

20.0

25.0

Gate - Emitter voltage : VGE [ V ]

Collector-Emitter voltage : VCE [V]

Capacitance vs. Collector-Emitter voltage (typ.)

Dynamic Gate charge (typ.)

VGE=0V, f= 1MHz, Tj= 25℃

Vcc=600V， Ic=75A，Tj= 25℃

100.0

10.0

1.0

Cies

VGE

Cres

Coes

VCE

0

0.1

0

100

200

300

400

0.0

10.0

20.0

30.0

Collector-Emitter voltage : VCE [V]

Gate charge : Qg [ nC ]

a

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Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25℃

Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125℃

1000

100

10

1000

100

10

toff

ton

tr

ton

tr

tf

0

50

100

150

200

0

50

100

150

200

Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.)

Switching loss vs. Collector current (typ.)

Vcc=600V, Ic=75A, VGE=±15V, Tj= 25℃

Vcc=600V, VGE=±15V, Rg=9.1Ω

10000

1000

100

20.0

Eoff(125℃)

15.0

10.0

5.0

tr

Eon(125℃)

toff

ton

Eoff(25℃)

Eon(25℃)

tf

Err(125℃)

Err(25℃)

10

0.0

1.0

10.0

100.0

1000.0

0

50

100

150

200

Collector current : Ic [ A ]

Gate resistance : Rg [ Ω ]

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=75A, VGE=±15V, Tj= 125℃

Reverse bias safe operating area

+VGE=15V,-VGE≦15V, RG≧9.1Ω ,Tj≦125℃

200

150

100

50

Eon

Eoff

Err

20.0

10.0

0.0

0

1.0

10.0

100.0

1000.0

0

400

800

1200

Gate resistance : Rg [ Ω ]

Collector - Emitter voltage : VCE [ V ]

a

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a

Forward current vs. Forward on voltage (typ.)

chip

Reverse recovery characteristics (typ.)

Vcc=600V, VGE=±15V, Rg=9.1Ω

125

100

75

50

25

0

1000

100

10

Tj=25℃

Tj=125℃

trr (125℃)

Irr (125℃)

trr (25℃)

Irr (25℃)

0

50

100

150

200

0.00

1.00

2.00

3.00

4.00

Forward on voltage : VF [ V ]

Forward current : IF [ A ]

Temperature characteristic (typ.)

Transient thermal resistance

100

10

1

10.000

1.000

0.100

0.010

0.001

FWD

IGBT

0.1

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

0.001

0.010

0.100

1.000

Pulse width : Pw [ sec ]

Temperature [℃ ]

a

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Warnings

-

This product shall be used within its absolute maximum rating (voltage, current, and temperature).

This product may be broken in case of using beyond the ratings.

製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。

絶対最大定格を超えて使用すると、素子が破壊する場合があります。

Connect adequate fuse or protector of circuit between three-phase line and

this product to prevent the equipment from causing secondary destruction.

万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ

又はブレーカーを必ず付けて２次破壊を防いでください。

Use this product after realizing enough working on environment and considering of product's reliability life.

This product may be broken before target life of the system in case of using beyond the product's reliability life.

製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。

製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,

sulfurous acid gas), the product's performance and appearance can not be ensured easily.

酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は

致しかねます。

-

Use this product within the power cycle curve (Technical Rep.No. : MT5F12959)

本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)

Never add mechanical stress to deform the main or control terminal.

The deformed terminal may cause poor contact problem.

主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合

があります。

-

According to the outline drawing, select proper length of screw for main terminal.

Longer screws may break the case.

本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。ꢀ

ネジが長いとケースが破損する場合があります。

Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the

roughness within 10um. Also keep the tightening torque within the limits of this specification.

Improper handling may cause isolation breakdown and this may lead to a critical accident.

冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。ꢀ誤った取り扱

いをすると絶縁破壊を起こし、重大事故に発展する場合があります。

It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA

specification. This product may be broken if the locus is out of the RBSOA.

ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。

RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。

-

If excessive static electricity is applied to the control terminals, the devices may be broken.

Implement some countermeasures against static electricity.

制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。

取り扱い時は静電気対策を実施して下さい。

a

-

Never add the excessive mechanical stress to the main or control terminals

when the product is applied to equipments. The module structure may be broken.

素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。

端子構造が破壊する可能性があります。

a

In case of insufficient -VGE, erroneous turn-on of IGBT may occur.

-VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V)

逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。

誤点弧を起こさない為に-VGEは十分な値で設定して下さい。ꢀ（推奨値 : -VGE = -15V)

In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur.

Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.

ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。

誤点弧を起こさない為の最適なドライブ条件（+VGE, -VGE, RG等）でご使用下さい。

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Cautions

-

Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However,

ꢀ

semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or

death, damage to property like by fire, and other social damage resulted from a failure or malfunction of

the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,

spread-fire-preventive design, and malfunction-protective design.

富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、

誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災

等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計

など安全確保のための手段を講じて下さい。

-

The application examples described in this specification only explain typical ones that used the Fuji Electric

products. This specification never ensure to enforce the industrial property and other rights, nor license the

enforcement rights.

本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書

によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

The product described in this specification is not designed nor made for being applied to the equipment or

systems used under life-threatening situations. When you consider applying the product of this specification

to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,

atomic control systems and submarine relaying equipment or systems,ꢀplease apply after confirmation

of this product to be satisfied about system construction and required reliability.

本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを

目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力

制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に

満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.

a

13

MS5F 5354

13

H04-004-03

型号:	6MBI75UA-120
生命周期：	Obsolete
IHS 制造商：	FUJI ELECTRIC CO LTD
包装说明：	FLANGE MOUNT, R-XUFM-X28
针数：	28
Reach Compliance Code：	unknown
风险等级：	5.83
Is Samacsys：	N
外壳连接：	ISOLATED
最大集电极电流 (IC)：	100 A
集电极-发射极最大电压：	1200 V
配置：	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码：	R-XUFM-X28
元件数量：	6
端子数量：	28
封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UPPER
晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON
标称断开时间 (toff)：	360 ns
标称接通时间 (ton)：	250 ns
Base Number Matches：	1

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