ATF-551M4 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Gain
OIP3
P1dB
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
[1]
Gain
[1]
Output 3
rd
Order
Intercept Point
[1]
1dB Compressed
Output Power
[1]
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
Vds = 2.7V, gm =
∆Idss/∆Vgs;
∆Vgs
= 0.75 – 0.7 = 0.05V
Vgd = Vgs = -2.7V
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22
—
—
—
Typ.
0.47
0.37
0.1
220
—
0.5
0.5
17.5
18.0
24.1
30.0
14.6
16.0
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50Ω Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag
= 0.3
Γ_ang
= 11°
(0.3 dB loss)
DUT
Output
Matching Circuit
Γ_mag
= 0.3
Γ_ang
= 9°
(0.9 dB loss)
50Ω Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
ATF-551M4 Electrical Specifications
(see notes 2 and 3, as indicated)
Symbol
Fmin
Parameter and Test Condition
Minimum Noise Figure
[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.27
0.41
0.61
0.88
21.8
17.9
14.2
12.0
22.1
24.3
24.5
14.3
14.5
14.3
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ga
Associated Gain
[2]
OIP3
Output 3
rd
Order
Intercept Point
[3]
1dB Compressed
Output Power
[3]
P1dB
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
3
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