ATF-551M4 Typical Performance Curves, continued
20
19
18
17
16
15
0.6
0.5
0.4
0.3
0.2
0.1
0
36
32
28
24
20
16
2V
2.7V
3V
2V
2.7V
3V
2V
2.7V
3V
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
I
ds
ds
ds
Figure 11. Gain vs. I and V at 2 GHz[1]
.
Figure 12. Fmin vs. I and V at 2 GHz[2]
.
Figure 13. OIP3 vs. I and V at 2 GHz[1]
.
ds ds
ds
ds
ds
ds
17
16
15
14
13
12
11
10
18
16
14
12
10
8
6
4
2V
2.7V
3V
2V
2.7V
3V
2
0
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
dq
ds
Figure 14. IIP3 vs. I and V at 2 GHz[1]
.
Figure 15. P1dB vs. I and V at 2 GHz[1]
.
dq ds
ds
ds
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match with
reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
5
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
