ATF-551M4 Typical Performance Curves
26
25
24
GAIN (dB)
Fmin (dB)
23
22
21
20
19
18
0
5
10
15
20
25
30
35
I
ds
(mA)
2V
2.7V
3V
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0
5
10
15
20
25
30
35
I
ds
(mA)
OIP3 (dBm)
2V
2.7V
3V
32
30
28
26
24
22
20
18
16
0
5
10
15
20
25
30
35
I
ds
(mA)
2V
2.7V
3V
Figure 6. Gain vs. I
ds
and V
ds
at 900 MHz
[1]
.
Figure 7. Fmin vs. I
ds
and V
ds
at 900 MHz
[2]
.
Figure 8. OIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
7
6
5
P1dB (dBm)
2V
2.7V
3V
18
17
16
15
14
13
12
11
10
35
9
0
5
10
15
20
25
2V
2.7V
3V
IIP3 (dBm)
4
3
2
1
0
-1
-2
0
5
10
15
20
25
30
30
35
I
ds
(mA)
I
dq
(mA)
Figure 9. IIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
Figure 10. P1dB vs. I
dq
and V
ds
at 900 MHz
[1]
.
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
4
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