High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low
Noise Applications
• Transition Frequency
f
T
= 25 GHz
• Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
P
1dB
of 12 dBm at 2 V and
20 mA
• Can be Used Without
Impedance Matching
Surface Mount Plastic
Description
Package/ SOT-343 (SC-70)
Hewlett Packard’s HBFP-0420 is a
Outline 4T
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P
1dB
of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for
cellular/
PCS handsets
as well as for
C-Band and Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Pin Configuration
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for
TV Delivery
and TVRO Systems up to
10 GHz
Emitter
Collector
Note:
Package marking provides orientation
and identification.
03
Base
Emitter
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