CY62128EV30 MoBL
®
Capacitance
(For all packages)
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
TSOP I
33.01
3.42
SOIC
48.67
25.86
STSOP
32.56
3.59
Unit
°C/W
°C/W
Figure 4. AC Test Loads and Waveforms
R1
V
CC
30 pF
INCLUDING
JIG AND
SCOPE
R2
GND
Rise Time = 1 V/ns
10%
V
CC
OUTPUT
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THEVENIN
EQUIVALENT
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.50V
16667
15385
8000
1.20
R
TH
V
3.0V
1103
1554
645
1.75
Unit
Ω
Ω
Ω
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR[7]
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.5V,
CE
1
> V
CC
−
0.2V or CE
2
< 0.2V,
V
IN
> V
CC
−
0.2V or V
IN
< 0.2V
Industrial/Auto-A
Auto-E
0
t
RC
Conditions
Min
1.5
3
30
Typ
Max Unit
V
μA
μA
ns
ns
t
CDR[8]
t
R[9]
Chip Deselect to Data Retention
Time
Operation Recovery Time
Note
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μs
or stable at V
CC(min)
>
100
μs.
Document #: 38-05579 Rev. *E
Page 4 of 12
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