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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G
60V N-Channel self protected enhancement mode
IntelliFET™ MOSFET with status indication
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
IN
= 5V)
Clamping energy
V
DS
= 60V
500m
1.4A
550mJ
Description
Self protected low side MOSFET. Monolithic
over temperature, over current, over voltage
(active clamp) and ESD protected logic level
functionality. Intended as a general purpose
switch, with status indication.
Features
Status pin (analog status indication)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
Load dump protection (actively protects
load)
Logic level input
High continuous current rating
Note:
The tab is connected to the drain pin and
must be electrically isolated from the source
pin. Connection of significant copper to the tab
is recommended for best thermal performance.
S
D
Status
IN
Top view
Ordering information
Device
ZXMS6002GTA
Part mark
ZXMS6002
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity
per reel
1000
© Zetex Semiconductors plc 2007