FDS8880 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 25 C, V
GS
= 4.5V, R
θJA
= 50 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
30
±20
11.6
10.7
Figure 4
82
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDS8880
FDS8880
Device
FDS8880
FDS8880_NL (Note 4)
Package
SO-8
SO-8
Reel Size
330mm
330mm
Tape Width
12mm
12mm
Quantity
2500 units
2500 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±20V
T
A
=
150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 11.6A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 10.7A, V
GS
= 4.5V
I
D
= 11.6A, V
GS
= 10V,
T
A
= 150
o
C
1.2
-
-
-
-
0.0079
0.0096
2.5
0.010
0.012
Ω
V
0.0125 0.0163
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 11.6A
I
g
= 1.0mA
-
-
-
0.6
-
-
-
-
-
-
1235
260
150
2.5
23
12
1.3
3.3
2.0
4.2
-
-
-
4.3
30
16
1.6
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
2
FDS8880 Rev. A1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
