FDS8880 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
A
= 25°C unless otherwise noted
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
30
I
AS
, AVALANCHE CURRENT (A)
40
10
STARTING T
J
= 25
o
C
20
T
J
= 150
o
C
10
T
J
= -55
o
C
STARTING T
J
= 150
o
C
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
V
GS
= 10V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 5V
V
GS
= 3V
30
V
GS
= 4V
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
40
50
Figure 6. Transfer Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 11.6A
30
20
20
10
T
A
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.2
0.4
0.6
0.8
10
I
D
= 1A
0
2
4
6
8
10
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.2
1.6
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
1.0
1.2
1.0
0.8
0.8
V
GS
= 10V, I
D
= 11.6A
0.6
-80
-40
0
40
80
(
o
C)
120
160
0.6
-80
-40
0
40
80
(
o
C)
120
160
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
5
FDS8880 Rev. A1
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
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