FDS8880 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
A
= 25°C unless otherwise noted
1.2
12
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
10
V
GS
= 10V
8
V
GS
= 4.5V
0.8
0.6
6
0.4
4
0.2
2
R
θJA
=50
o
C/W
0
0
25
50
75
100
(
o
C)
125
150
25
50
75
100
125
(
o
C)
150
T
A
, AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE
0
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
R
θJA
=50
o
C/W
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
0.1
P
DM
0.01
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t, RECTANGULAR PULSE DURATION (s)
10
1
10
2
10
3
Figure 3. Normalized Maximum Transient Thermal Impedance
1400
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
V
GS
= 10V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
V
GS
= 4.5V
100
150 - T
A
125
10
10
-5
10
-4
10
-3
10
-2
10
-1
t , PULSE WIDTH (s)
10
0
10
1
10
2
10
3
Figure 4. Peak Current Capability
4
FDS8880 Rev. A1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
