FDS8880 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
A
= 25°C unless otherwise noted
1.10
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1.05
1000
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
2000
C
ISS
=
C
GS
+ C
GD
1.00
C
RSS
=
C
GD
0.95
V
GS
= 0V, f = 1MHz
0.90
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
100
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
DD
= 15V
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
Figure 12. Capacitance vs Drain to Source
Voltage
6
4
2
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 11.6A
I
D
= 1A
0
5
10
15
20
25
0
Q
g
, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
6
FDS8880 Rev. A1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
