欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF640N 参数 Datasheet PDF下载

IRF640N图片预览
型号: IRF640N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET 200V , 18A , 0.15ohm [N-Channel Power MOSFETs 200V, 18A, 0.15ohm]
分类和应用: 晶体晶体管局域网
文件页数/大小: 11 页 / 157 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号IRF640N的Datasheet PDF文件第3页浏览型号IRF640N的Datasheet PDF文件第4页浏览型号IRF640N的Datasheet PDF文件第5页浏览型号IRF640N的Datasheet PDF文件第6页浏览型号IRF640N的Datasheet PDF文件第8页浏览型号IRF640N的Datasheet PDF文件第9页浏览型号IRF640N的Datasheet PDF文件第10页浏览型号IRF640N的Datasheet PDF文件第11页  
Thermal Resistance vs. Mounting Pad Area  
The maximum rated junction temperature, T , and the  
thermal resistance of the heat dissipating path determines  
80  
60  
40  
20  
JM  
R
= 26.51+ 19.84/(0.262+Area)  
θJA  
the maximum allowable device power dissipation, P , in  
DM  
an application.  
Therefore the application’s ambient  
o
o
temperature, T ( C), and thermal resistance R  
( C/W)  
A
θJA  
must be reviewed to ensure that T  
is never exceeded.  
JM  
Equation 1 mathematically represents the relationship and  
serves as the basis for establishing the rating of the part.  
(T  
T )  
A
JM  
Z
(EQ. 1)  
P
= ------------------------------  
DM  
θJA  
In using surface mount devices such as the TO-263  
package, the environment in which it is applied will have a  
significant influence on the part’s current and maximum  
0.1  
1
10  
2
power dissipation ratings. Precise determination of P  
complex and influenced by many factors:  
is  
AREA,TOP COPPER AREA (in )  
DM  
Figure 20. Thermal Resistance vs Mounting  
Pad Area  
1. Mounting pad area onto which the device is attached and  
whether there is copper on one side or both sides of the  
board.  
2. The number of copper layers and the thickness of the  
board.  
3. The use of external heat sinks.  
4. The use of thermal vias.  
5. Air flow and board orientation.  
6. For non steady state applications, the pulse width, the  
duty cycle and the transient thermal response of the part,  
the board and the environment they are in.  
Fairchild provides thermal information to assist the  
designer’s preliminary application evaluation. Figure 20  
defines the R  
for the device as a function of the top  
θJA  
copper (component side) area. This is for a horizontally  
positioned FR-4 board with 1oz copper after 1000 seconds  
of steady state power with no air flow. This graph provides  
the necessary information for calculation of the steady state  
junction temperature or power dissipation. Pulse  
applications can be evaluated using the Fairchild device  
Spice thermal model or manually utilizing the normalized  
maximum transient thermal impedance curve.  
Displayed on the curve are R  
values listed in the  
θJA  
Electrical Specifications table. The points were chosen to  
depict the compromise between the copper board area, the  
thermal resistance and ultimately the power dissipation,  
P
.
DM  
Thermal resistances corresponding to other copper areas  
can be obtained from Figure 20 or by calculation using  
Equation 2. R  
is defined as the natural log of the area  
θJA  
times a coefficient added to a constant. The area, in square  
inches is the top copper area including the gate and source  
pads.  
19.84  
(0.262 + Area)  
R
= 26.51 + -------------------------------------  
(EQ. 2)  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. B