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IRF640N 参数 Datasheet PDF下载

IRF640N图片预览
型号: IRF640N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET 200V , 18A , 0.15ohm [N-Channel Power MOSFETs 200V, 18A, 0.15ohm]
分类和应用: 晶体晶体管局域网
文件页数/大小: 11 页 / 157 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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SABER Electrical Model  
REV 10 October 2000  
template IRF640N n2,n1,n3  
electrical n2,n1,n3  
{
var i iscl  
dp..model dbodymod = (isl = 1.2e-12, rs=5.5e-3, trs1=1e-5, trs2=8e-6, cjo = 12.5e-10, m=0.42, tt = 1e-7, xti = 5.5)  
dp..model dbreakmod = (rs=2.5, trs1=1e-3, trs2=-8.9e-6)  
dp..model dplcapmod = (cjo = 2.5e-9, isl =10e-30, nl=10, m = 0.9)  
m..model mmedmod = (type=_n, vto = 3.14, kp = 5, is = 1e-30, tox = 1)  
m..model mstrongmod = (type=_n, vto = 3.68, kp = 100, is = 1e-30, tox = 1)  
m..model mweakmod = (type=_n, vto = 2.76, kp = 0.05, is = 1e-30, tox = 1, rs = 0.1)  
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.5, voff = -1)  
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -1, voff = -8.5)  
LDRAIN  
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.1, voff = 0.2)  
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = -0.1)  
DPLCAP  
DRAIN  
2
5
10  
RLDRAIN  
c.ca n12 n8 = 3.6e-9  
c.cb n15 n14 = 3.5e-9  
c.cin n6 n8 = 2e-9  
RSLC1  
51  
RSLC2  
ISCL  
dp.dbody n7 n5 = model=dbodymod  
dp.dbreak n5 n11 = model=dbreakmod  
dp.dplcap n10 n5 = model=dplcapmod  
DBREAK  
50  
-
RDRAIN  
6
8
11  
ESG  
EVTHRES  
+
+
16  
21  
i.it n8 n17 = 1  
-
19  
8
MWEAK  
LGATE  
EVTEMP  
+
DBODY  
l.ldrain n2 n5 = 1e-9  
l.lgate n1 n9 = 5.78e-9  
RGATE  
GATE  
6
-
18  
22  
EBREAK  
+
MMED  
1
9
20  
l.lsource n3 n7 = 3.92e-9  
MSTRO  
8
17  
18  
-
RLGATE  
LSOURCE  
CIN  
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u  
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u  
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u  
SOURCE  
3
7
RSOURCE  
RLSOURCE  
S1A  
S2A  
res.rbreak n17 n18 = 1, tc1 = 1.52e-3, tc2 = -2e-7  
res.rdrain n50 n16 = 83.5e-3, tc1 = 9.8e-3, tc2 = 2.6e-5  
res.rgate n9 n20 = 7.6e-1  
res.rldrain n2 n5 = 10  
res.rlgate n1 n9 = 57.8  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RVTEMP  
19  
S1B  
S2B  
13  
CB  
CA  
IT  
14  
-
res.rlsource n3 n7 = 39.2  
+
+
res.rslc1 n5 n51 = 1e-6, tc1 = 3e-3, tc2 = 1e-6  
res.rslc2 n5 n50 = 1e3  
res.rsource n8 n7 = 10e-3, tc1 = 1e-3, tc2 = 1e-6  
res.rvtemp n18 n19 = 1, tc1 = -2.8e-3, tc2 = 1.7e-6  
res.rvthres n22 n8 = 1, tc1 = -2.3e-3, tc2 = -1.3e-5  
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
spe.ebreak n11 n7 n17 n18 = 225  
spe.eds n14 n8 n5 n8 = 1  
spe.egs n13 n8 n6 n8 = 1  
spe.esg n6 n10 n6 n8 = 1  
spe.evtemp n20 n6 n18 n22 = 1  
spe.evthres n6 n21 n19 n8 = 1  
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod  
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod  
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod  
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod  
v.vbat n22 n19 = dc=1  
equations {  
i (n51->n50) +=iscl  
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/38))** 2.5))  
}
}
©2002 Fairchild Semiconductor Corporation  
Rev. B